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Page title matches

• 18469673. ETCHING CONTROL DEVICE, ETCHING CONTROL METHOD, AND ETCHING CONTROL SYSTEM simplified abstract (TOKYO ELECTRON LIMITED)
  =ETCHING CONTROL DEVICE, ETCHING CONTROL METHOD, AND ETCHING CONTROL SYSTEM= ==ETCHING CONTROL DEVICE, ETCHING CONTROL METHOD, AND ETCHING CONTROL SYSTEM - A simplified explanation of the abstract== ...
  4 KB (574 words) - 05:18, 25 March 2024
• Samsung electronics co., ltd. (20240318078). ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION simplified abstract
  ...NTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION= ...NTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION - A simplified explanation of the abstract== ...
  4 KB (542 words) - 08:24, 26 September 2024
• 18586037. ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION simplified abstract (Samsung Electronics Co., Ltd.)
  ...NTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION= ...NTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION - A simplified explanation of the abstract== ...
  4 KB (514 words) - 09:21, 27 September 2024
• Samsung electronics co., ltd. (20240294829). ETCHING GAS AND ETCHING METHOD USING THE SAME simplified abstract
  =ETCHING GAS AND ETCHING METHOD USING THE SAME= ==ETCHING GAS AND ETCHING METHOD USING THE SAME - A simplified explanation of the abstract== ...
  3 KB (495 words) - 03:51, 9 September 2024
• 18376034. ETCHING GAS AND ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
  =ETCHING GAS AND ETCHING METHOD USING THE SAME= ==ETCHING GAS AND ETCHING METHOD USING THE SAME - A simplified explanation of the abstract== ...
  3 KB (481 words) - 08:35, 9 September 2024
• 17883778. DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
  =DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME= ==DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME - A simplified explanation of the abstract== ...
  4 KB (563 words) - 17:51, 2 January 2024
• 18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
  =METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS= ==METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS - A simplified explanation of the abstract== ...
  4 KB (529 words) - 04:18, 9 February 2024
• 18468928. ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD simplified abstract (TOKYO ELECTRON LIMITED)
  =ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD= ==ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD - A simplified explanation of the abstract== ...
  4 KB (549 words) - 05:17, 25 March 2024
• 18468966. ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD simplified abstract (TOKYO ELECTRON LIMITED)
  =ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD= ==ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD - A simplified explanation of the abstract== ...
  4 KB (575 words) - 05:17, 25 March 2024
• Samsung display co., ltd. (20240242980). SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ETCHING METHOD simplified abstract
  =SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ETCHING METHOD= ==SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ETCHING METHOD - A simplified explanation of the abstract== ...
  4 KB (594 words) - 02:58, 19 July 2024
• 18390323. SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ETCHING METHOD simplified abstract (Samsung Display Co., LTD.)
  =SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ETCHING METHOD= ==SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ETCHING METHOD - A simplified explanation of the abstract== ...
  4 KB (554 words) - 06:31, 20 July 2024
• 18236748. EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
  =EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS= ==EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS - A simplified explanation of the abstract== ...
  3 KB (408 words) - 03:29, 4 March 2024
• Samsung electronics co., ltd. (20250011650). ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
  =ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING ==ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING ...
  2 KB (312 words) - 08:29, 25 March 2025
• 18750176. ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME (Samsung Electronics Co., Ltd.)
  =ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING ==ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING ...
  2 KB (312 words) - 08:12, 18 February 2025
• Samsung electronics co., ltd. (20240318077). ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract
  =ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING T ==ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING T ...
  4 KB (475 words) - 08:24, 26 September 2024
• 18612457. ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
  =ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING T ==ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING T ...
  4 KB (507 words) - 09:21, 27 September 2024
• 17865773. PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
  =PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME= ==PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME - A simplified explanation of the abstract== ...
  2 KB (351 words) - 02:29, 3 January 2024
• 17893783. PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
  =PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME= ==PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME ...
  3 KB (487 words) - 09:15, 4 January 2024
• Samsung electronics co., ltd. (20250129288). ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME
  ..."Patent","identifier":"20250129288","name":"ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICO =ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICO ...
  4 KB (483 words) - 15:48, 29 April 2025
• 18916329. ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME (Samsung Electronics Co., Ltd.)
  =ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICO ==ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICO ...
  3 KB (401 words) - 12:05, 28 April 2025

Page text matches

• 20250215318. Etching Composition (TOKYO OHKA KOGYO ., .)
  = ETCHING COMPOSITION, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT = ...an amine compound containing a tertiary amine, and an oxidizing agent. the etching composition may also contain at least one of an alkali compound, an organic ...
  2 KB (215 words) - 18:35, 3 July 2025
• Kabushiki kaisha toshiba (20250105014). ETCHING METHOD
  =ETCHING METHOD= ==ETCHING METHOD== ...
  1 KB (178 words) - 04:33, 30 March 2025
• 18602237. ETCHING METHOD (KABUSHIKI KAISHA TOSHIBA)
  =ETCHING METHOD= ==ETCHING METHOD== ...
  1 KB (178 words) - 05:02, 31 March 2025
• Stmicroelectronics international n.v. (20250006506). SINGLE-MASK STACK ETCHING METHODS FOR FORMING STAIRCASE STRUCTURES
  =SINGLE-MASK STACK ETCHING METHODS FOR FORMING STAIRCASE STRUCTURES= ==SINGLE-MASK STACK ETCHING METHODS FOR FORMING STAIRCASE STRUCTURES== ...
  2 KB (240 words) - 10:12, 17 February 2025
• 20250232983. Etching Method, (CENTRAL GLASS , LIMITED)
  ...G METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, ETCHING APPARATUS AND ETCHING GAS = ...he film at least containing si and o. the present disclosure relates to an etching method including bringing (i) hf gas and (ii) at least one compound selecte ...
  2 KB (282 words) - 03:14, 21 July 2025
• 18568637. DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD simplified abstract (Resonac Corporation)
  =DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD= ==DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD - A ...
  3 KB (433 words) - 05:13, 23 August 2024
• 20250215320. Etching Method Plas (Tokyo Electron Limited)
  = ETCHING METHOD AND PLASMA PROCESSING APPARATUS = a technique of improving an etching shape is provided. ...
  1 KB (171 words) - 18:35, 3 July 2025
• Samsung display co., ltd. (20250118571). PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS
  =PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS= ==PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS== ...
  2 KB (241 words) - 03:43, 11 April 2025
• 18757975. PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS (Samsung Display Co., LTD.)
  =PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS= ==PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS== ...
  2 KB (241 words) - 04:35, 11 April 2025
• 18398146. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
  =ETCHING METHOD AND PLASMA PROCESSING APPARATUS= ==ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the ab ...
  2 KB (306 words) - 07:17, 12 July 2024
• 18966174. ETCHING METHOD AND PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
  =ETCHING METHOD AND PLASMA PROCESSING APPARATUS= ==ETCHING METHOD AND PLASMA PROCESSING APPARATUS== ...
  1 KB (164 words) - 05:20, 24 March 2025
• 17874738. METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
  =METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS= ==METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS - A simplified explanation of the abstract== ...
  3 KB (422 words) - 05:34, 2 January 2024
• 17865773. PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
  =PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME= ==PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME - A simplified explanation of the abstract== ...
  2 KB (351 words) - 02:29, 3 January 2024
• Applied materials, inc. (20250133965). SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE
  =SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE= ==SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE== ...
  1 KB (190 words) - 11:11, 28 April 2025
• 18688260. SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE (Applied Materials, Inc.)
  =SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE= ==SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE== ...
  1 KB (190 words) - 12:51, 28 April 2025
• Samsung electronics co., ltd. (20240294829). ETCHING GAS AND ETCHING METHOD USING THE SAME simplified abstract
  =ETCHING GAS AND ETCHING METHOD USING THE SAME= ==ETCHING GAS AND ETCHING METHOD USING THE SAME - A simplified explanation of the abstract== ...
  3 KB (495 words) - 03:51, 9 September 2024
• 20250231456. Metal Oxide Wet Etching Metho (PSIQUANTUM .)
  = METAL OXIDE WET ETCHING METHOD = ...over the metal oxide layer, and etching the metal oxide layer using a wet etching medium containing hydrofluoric acid, one or more additional acids having an ...
  2 KB (249 words) - 02:59, 21 July 2025
• 18554225. ETCHING METHOD AND PROCESSING DEVICE simplified abstract (Tokyo Electron Limited)
  =ETCHING METHOD AND PROCESSING DEVICE= ==ETCHING METHOD AND PROCESSING DEVICE - A simplified explanation of the abstract== ...
  2 KB (329 words) - 08:35, 14 June 2024
• 18376034. ETCHING GAS AND ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
  =ETCHING GAS AND ETCHING METHOD USING THE SAME= ==ETCHING GAS AND ETCHING METHOD USING THE SAME - A simplified explanation of the abstract== ...
  3 KB (481 words) - 08:35, 9 September 2024
• 18336933. REPAIR PROCESS USING PLASMA ETCHING (Raytheon Technologies Corporation)
  =REPAIR PROCESS USING PLASMA ETCHING= ==REPAIR PROCESS USING PLASMA ETCHING== ...
  1,005 bytes (137 words) - 07:41, 19 December 2024