18966174. ETCHING METHOD AND PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Takayuki Katsunuma of Miyagi JP
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
This abstract first appeared for US patent application 18966174 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Original Abstract Submitted
Provided is a technique for improving a mask selectivity in etching. An etching method according to the present disclosure includes step (a) preparing a substrate including a silicon-containing film and a mask on the silicon-containing film, the mask including an opening pattern, step (b) forming a metal-containing film on the mask, and step (c) etching the silicon-containing film by generating the plasma from a first processing gas containing a hydrogen fluoride gas.