18602237. ETCHING METHOD (KABUSHIKI KAISHA TOSHIBA)
ETCHING METHOD
Organization Name
Inventor(s)
Hiroki Kawakami of Yokohama JP
Kazuhito Higuchi of Yokohama JP
Takayuki Tajima of Sagamihara JP
ETCHING METHOD
This abstract first appeared for US patent application 18602237 titled 'ETCHING METHOD
Original Abstract Submitted
According to one embodiment, an etching method is provided. The etching method includes: forming a layer containing a first metal catalyst at a surface containing a semiconductor; first etching using the first metal catalyst; forming a layer containing a second metal catalyst having a larger diffusion coefficient than that of the first metal catalyst at the layer containing the first metal catalyst; and second etching using the second metal catalyst.