Applied materials, inc. (20250133965). SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE
SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE
Organization Name
Inventor(s)
Vijay Bhan Sharma of Bharatpur IN
Bharatwaj Ramakrishnan of San Jose CA US
Sukti Chatterjee of San Jose CA US
SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE
This abstract first appeared for US patent application 20250133965 titled 'SELECTIVE ETCHING OF SCANDIUM-DOPED ALUMINUM NITRIDE
Original Abstract Submitted
exemplary substrate processing methods are described. the methods may include providing a scandium-doped aluminum nitride layer on a metal layer. they may further include etching a portion of the scandium-doped aluminum nitride layer with an etching composition. the etching composition may include greater than or about 80 wt. % phosphoric acid. the compositions may further be characterized by a temperature of greater than or about 90� c. during etching.