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Category:H10N50/85
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Pages in category "H10N50/85"
The following 160 pages are in this category, out of 160 total.
1
- 18063950. LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS simplified abstract (International Business Machines Corporation)
- 18064261. REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 18097194. ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE simplified abstract (International Business Machines Corporation)
- 18116835. PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FREE LAYER simplified abstract (Samsung Electronics Co., Ltd.)
- 18116836. PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING simplified abstract (Samsung Electronics Co., Ltd.)
- 18116839. PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX simplified abstract (Samsung Electronics Co., Ltd.)
- 18148240. CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES simplified abstract (Intel Corporation)
- 18164845. MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A DIFFUSION BLOCKING SPACER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18179646. TEMPLATING LAYERS FOR SPIN ORBIT TORQUE ASSISTED SWITCHING OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18179646. TEMPLATING LAYERS FOR SPIN ORBIT TORQUE ASSISTED SWITCHING OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (Samsung Electronics Co., Ltd.)
- 18185961. MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18218920. NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (International Business Machines Corporation)
- 18218920. NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18218926. TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (International Business Machines Corporation)
- 18218926. TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18236923. MAGNETIC MEMORY DEVICE (United Microelectronics Corp.)
- 18242084. MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18292218. METHOD FOR MANUFACTURING SPIN WAVE EXCITATION/DETECTION STRUCTURE simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
- 18303503. VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK hynix Inc.)
- 18348087. FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract (International Business Machines Corporation)
- 18348087. FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18454960. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459823. MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18466004. MAGNETIC TUNNEL JUNCTION (MTJ) STRUCTURE AND MEMORY CELL (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18466727. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18470708. MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY (TDK CORPORATION)
- 18492181. MAGNETIC MEMORY DEVICES USING SPIN CURRENT AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18519085. MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520427. MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18525322. MAGNETIC MEMORY DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
- 18561565. MAGNETIC SENSOR AND MAGNETIC DETECTION SYSTEM simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18592306. MAGNETIC DEVICE AND MAGNETIC STORAGE DEVICE simplified abstract (KIOXIA CORPORATION)
- 18593293. MAGNETIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18599458. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18599458. MAGNETIC MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18599920. MAGNETIC MEMORY DEVICE, AND MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18610212. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18611753. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18615422. CONFINED CELL STRUCTURES AND METHODS OF FORMING CONFINED CELL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18615459. MAGNETIC TUNNEL JUNCTION DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18633006. SPIN ORBIT TORQUE MATERIALS, MAGNETIC MEMORY DEVICE INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SPIN ORBIT TORQUE MATERIALS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18645189. Spin Orbital Squared (SO-SO) Logic (Western Digital Technologies, Inc.)
- 18662053. Semiconductor Memory Device with Spin-Orbit Coupling Channel simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18669572. MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18677589. MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18677654. MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18679437. MAGNETORESISTIVE RANDOM ACCESS MEMORY simplified abstract (United Microelectronics Corp.)
- 18679533. MEMORY CELL WITH A BUFFER LAYER AND ITS FABRICATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18691163. SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18740054. Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic Applications (Western Digital Technologies, Inc.)
- 18752170. MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract (International Business Machines Corporation)
- 18815820. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18829343. MAGNETIC MEMORY DEVICE (Kioxia Corporation)
- 18946936. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
I
- Intel corporation (20240206348). PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY MATERIALS simplified abstract
- Intel corporation (20240224814). CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES simplified abstract
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- International business machines corporation (20240196754). LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS simplified abstract
- International business machines corporation (20240196755). REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract
- International business machines corporation (20240244982). ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE simplified abstract
- International business machines corporation (20240306517). TEMPLATING LAYERS FOR SPIN ORBIT TORQUE ASSISTED SWITCHING OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract
- International business machines corporation (20240334837). MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS simplified abstract
- International business machines corporation (20240349620). MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract
- International business machines corporation (20250107453). ORDERED ALLOY MAGNETIC TUNNEL JUNCTION DEVICE
- International Business Machines Corporation patent applications on February 13th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 30th, 2025
- International Business Machines Corporation patent applications on July 18th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
- International Business Machines Corporation patent applications on March 27th, 2025
- International Business Machines Corporation patent applications on October 17th, 2024
- International Business Machines Corporation patent applications on October 3rd, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 12th, 2024
K
- Kioxia corporation (20240099153). STORAGE DEVICE simplified abstract
- Kioxia corporation (20240099158). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia corporation (20240298549). MAGNETIC DEVICE AND MAGNETIC STORAGE DEVICE simplified abstract
- Kioxia corporation (20240315049). MAGNETIC MEMORY DEVICE, AND MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia corporation (20240315143). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia corporation (20250098545). MAGNETIC MEMORY DEVICE
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 19th, 2024
- KIOXIA CORPORATION patent applications on September 5th, 2024
M
P
S
- Samsung electronics co., ltd. (20240234000). PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING simplified abstract
- Samsung electronics co., ltd. (20240237542). PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FREE LAYER simplified abstract
- Samsung electronics co., ltd. (20240237543). PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX simplified abstract
- Samsung electronics co., ltd. (20240249759). MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES simplified abstract
- Samsung electronics co., ltd. (20240249760). MAGNETIC MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240251685). MAGNETIC MEMORY DEVICES USING SPIN CURRENT AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240284802). MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240321333). MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240334840). MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240347089). FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract
- Samsung electronics co., ltd. (20240349619). NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract
- Samsung electronics co., ltd. (20240349622). TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract
- Samsung electronics co., ltd. (20240349623). SPIN ORBIT TORQUE MATERIALS, MAGNETIC MEMORY DEVICE INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SPIN ORBIT TORQUE MATERIALS simplified abstract
- Samsung electronics co., ltd. (20240381782). MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240423097). MAGNETIC MEMORY DEVICES
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on November 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 17th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 17th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Shin-etsu chemical co., ltd. (20240341198). METHOD FOR MANUFACTURING SPIN WAVE EXCITATION/DETECTION STRUCTURE simplified abstract
- SHIN-ETSU CHEMICAL CO., LTD. patent applications on October 10th, 2024
- Sony semiconductor solutions corporation (20240415025). STORAGE ELEMENT AND STORAGE DEVICE
- Sony semiconductor solutions corporation (20250006237). MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION patent applications on December 12th, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION patent applications on January 2nd, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20240099149). MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315147). MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250089578). MAGNETIC TUNNEL JUNCTION (MTJ) STRUCTURE AND MEMORY CELL
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 30th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 13th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240237551). MAGNETIC TUNNEL JUNCTION DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240257853). TRANSISTORLESS MEMORY CELL simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240260278). NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240268236). MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A DIFFUSION BLOCKING SPACER LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324244). MEMORY CELL WITH A BUFFER LAYER AND ITS FABRICATION PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324471). MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379270). Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381779). Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381788). Semiconductor Device and Manufacturing Method of Semiconductor Device simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 8th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 13th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on July 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 6th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 26th, 2024
U
- United microelectronics corp. (20250017117). MAGNETIC MEMORY DEVICE
- United Microelectronics Corp. patent applications on January 9th, 2025
- US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract
- US Patent Application 18232256. Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices simplified abstract
- US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18234147. MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18361832. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18446563. STRUCTURE AND METHOD FOR MRAM DEVICES simplified abstract
- US Patent Application 18447912. MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM simplified abstract
