US Patent Application 18446563. STRUCTURE AND METHOD FOR MRAM DEVICES simplified abstract

STRUCTURE AND METHOD FOR MRAM DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Tsung-Chieh Hsiao of Changhua County (TW)]]

[[Category:Po-Sheng Lu of Hsinchu (TW)]]

[[Category:Wei-Chih Wen of Hsinchu (TW)]]

[[Category:Liang-Wei Wang of Hsinchu (TW)]]

[[Category:Yu-Jen Wang of Hsinchu (TW)]]

[[Category:Dian-Hau Chen of Hsinchu (TW)]]

[[Category:Yen-Ming Chen of Hsin-Chu County (TW)]]

STRUCTURE AND METHOD FOR MRAM DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446563 titled 'STRUCTURE AND METHOD FOR MRAM DEVICES

Simplified Explanation

The patent application describes a method of forming a semiconductor device.

• The device includes a bottom electrode, a magnetic tunneling junction (MTJ) element, a top electrode, and a sidewall spacer.
• At least one of the bottom electrode, top electrode, or sidewall spacer contains a magnetic material.
• The purpose of the invention is to provide a simplified and efficient method for forming a semiconductor device with magnetic components.
• The inclusion of magnetic materials in the device allows for enhanced functionality and performance.
• The invention may have applications in various fields such as data storage, magnetic sensors, and magnetic random-access memory (MRAM) devices.

Original Abstract Submitted

A method of forming a semiconductor device includes providing a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.