Taiwan semiconductor manufacturing company, ltd. (20240260278). NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract
Contents
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Chieh Mo of Kaohsiung City (TW)
Shih-Chi Kuo of Yangmei City (TW)
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240260278 titled 'NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
The abstract describes a memory structure with a dielectric fin over a substrate and memory cells on the sidewalls of the fin. Each memory cell consists of multiple layers with tilted boundaries away from the fin sidewalls.
- Memory structure with dielectric fin and memory cells on sidewalls
- Memory cells composed of conductor, selector, resistive material, and second conductor layers
- Tilted boundaries of layers away from fin sidewalls
- Innovative design for efficient memory storage
- Potential improvement in memory performance and density
Potential Applications: - Advanced computer memory systems - High-density data storage devices - Next-generation computing technologies
Problems Solved: - Enhanced memory cell efficiency - Increased data storage capacity - Improved memory performance
Benefits: - Higher memory density - Faster data access speeds - Enhanced overall system performance
Commercial Applications: Title: "Innovative Memory Structure for High-Performance Computing" This technology could revolutionize the memory industry by enabling faster and more efficient data storage solutions. It has the potential to be widely adopted in various computing applications, from consumer electronics to high-performance computing systems.
Prior Art: Researchers can explore prior art related to memory cell structures, dielectric fins, and memory storage technologies to understand the evolution of similar concepts in the field.
Frequently Updated Research: Stay updated on the latest advancements in memory cell design, dielectric materials, and memory storage technologies to leverage cutting-edge innovations in this field.
Questions about Memory Structures with Dielectric Fins: 1. How does the tilted boundary design of memory cell layers contribute to improved memory performance? 2. What are the potential challenges in implementing this innovative memory structure in commercial devices?
Original Abstract Submitted
a memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.