Taiwan semiconductor manufacturing company, ltd. (20240381788). Semiconductor Device and Manufacturing Method of Semiconductor Device simplified abstract
Contents
Semiconductor Device and Manufacturing Method of Semiconductor Device
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shy-Jay Lin of Jhudong Township (TW)
Semiconductor Device and Manufacturing Method of Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381788 titled 'Semiconductor Device and Manufacturing Method of Semiconductor Device
The semiconductor device described in the abstract consists of a pair of active devices, a composite spin Hall electrode, and a magnetic tunnel junction. The composite spin Hall electrode is connected to the pair of active devices, while the magnetic tunnel junction is located on the opposite side of the composite spin Hall electrode.
- The spin Hall electrode is composed of a pair of heavy metal layers and a spacer layer in between them.
- The heavy metal layers are made of a heavy metal in a metastable state.
- The spacer layer is made of a material different from the heavy metal layers.
Potential Applications: - This technology could be used in advanced semiconductor devices for various electronic applications. - It may find applications in data storage and processing systems. - It could be utilized in magnetic sensors and other sensing devices.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides a novel approach to integrating spin Hall effect elements in electronic systems.
Benefits: - Improved functionality and reliability of semiconductor devices. - Enhanced data processing capabilities. - Potential for miniaturization and increased energy efficiency.
Commercial Applications: Title: Advanced Semiconductor Devices with Composite Spin Hall Electrode This technology has the potential to revolutionize the semiconductor industry by enabling the development of more efficient and advanced electronic devices. It could be utilized in various commercial applications such as data storage, sensing technologies, and advanced computing systems.
Questions about the technology: 1. How does the composite spin Hall electrode enhance the performance of semiconductor devices? 2. What are the potential implications of using a heavy metal in a metastable state in the construction of the spin Hall electrode?
Original Abstract Submitted
semiconductor device includes pair of active devices, composite spin hall electrode, and a magnetic tunnel junction. composite spin hall electrode is electrically connected to pair of active devices. magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. spin hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. pair of heavy metal layers is made of a heavy metal in a metastable state. spacer layer comprises first material different from the pair of heavy metal layers.
