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Category:H10D62/832
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This category has the following 15 subcategories, out of 15 total.
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Pages in category "H10D62/832"
The following 11 pages are in this category, out of 11 total.
1
- 18690444. SILICON CARBIDE SEMICONDUCTOR DEVICE (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18836937. SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18986778. SiC SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18989246. SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE (NGK INSULATORS, LTD.)
- 19007076. SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19020623. SiC SINGLE CRYSTAL SUBSTRATE (Resonac Corporation)