18690444. SILICON CARBIDE SEMICONDUCTOR DEVICE (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
SILICON CARBIDE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18690444 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
Original Abstract Submitted
A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface. The first main surface is provided with a gate trench. A contour of the gate trench on the first main surface is curved along a third side surface and a fourth side surface, and a contour of the gate trench in a cross section includes a first local minimum point at which a radius of curvature is a local minimum at a boundary between a first side surface and the third side surface, a second local minimum point at which a radius of curvature is a local minimum at a boundary between a second side surface and the fourth side surface, and a third local minimum point at which a radius of curvature is a local minimum at a boundary between the third side surface and the fourth side surface.