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Category:H10B53/10
Subcategories
This category has the following 5 subcategories, out of 5 total.
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Pages in category "H10B53/10"
The following 43 pages are in this category, out of 43 total.
1
- 18088552. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE CAPACITORS simplified abstract (Intel Corporation)
- 18150289. FERROELECTRIC MEMORY DEVICE WITH BLOCKING LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18204773. FORMATION FOR MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18238028. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18429677. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18436574. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
- 18511461. FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18588621. MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18608149. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18811335. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 19018073. Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor (Micron Technology, Inc.)
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- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20250151284). Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on February 20th, 2025
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 5th, 2024
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- Samsung electronics co., ltd. (20240324237). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240357831). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240414925). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250024687). 3-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FeRAM) AND METHOD OF MANUFACTURING THE SAME
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on October 24th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024