Pages that link to "Category:Tahir Ghani of Portland OR US"
The following pages link to Category:Tahir Ghani of Portland OR US:
Displaying 30 items.
- Intel corporation (20250006547). INTEGRATED CIRCUIT STRUCTURES WITH REMOVED SUB-FIN (← links)
- Intel corporation (20250006790). TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRAIN LAYERS (← links)
- Intel corporation (20250006806). HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED LAYER (← links)
- Intel corporation (20250008723). THREE-DIMENSIONAL FLOATING BODY MEMORY (← links)
- Intel corporation (20250022939). CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (← links)
- Intel corporation (20250095693). CONNECTIONS OF BIT LINES AND WORD LINES IN STACKED MEMORY LAYERS TO A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR LAYER (← links)
- 18467947. CONNECTIONS OF BIT LINES AND WORD LINES IN STACKED MEMORY LAYERS TO A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR LAYER (Intel Corporation) (← links)
- Intel corporation (20250104760). STACKED MEMROY LAYERS WITH GLOBAL BIT LINE OR GLOBAL WORD LINE (← links)
- Intel corporation (20250107107). STACKED MEMORY LAYERS WITH UNIFORM ACCESS (← links)
- Intel corporation (20250107108). MEMORY LAYERS BONDED TO LOGIC LAYERS WITH INCLINATION (← links)
- Intel corporation (20250107181). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE (← links)
- 18471382. STACKED MEMROY LAYERS WITH GLOBAL BIT LINE OR GLOBAL WORD LINE (Intel Corporation) (← links)
- 18471402. STACKED MEMORY LAYERS WITH UNIFORM ACCESS (Intel Corporation) (← links)
- 18473421. MEMORY LAYERS BONDED TO LOGIC LAYERS WITH INCLINATION (Intel Corporation) (← links)
- 18972346. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE (Intel Corporation) (← links)
- Intel corporation (20250113550). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING (← links)
- Intel corporation (20250113607). FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES (← links)
- 18980999. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING (INTEL CORPORATION) (← links)
- 18978616. FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES (INTEL CORPORATION) (← links)
- Intel corporation (20250120152). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS (← links)
- 18986226. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS (Intel Corporation) (← links)
- Intel corporation (20250126832). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES (← links)
- 18999778. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES (Intel Corporation) (← links)
- Intel corporation (20250133821). INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES (← links)
- 19000039. INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES (Intel Corporation) (← links)
- Intel corporation (20250142870). FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM (← links)
- 19004029. FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM (Intel Corporation) (← links)
- Intel corporation (20250151338). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES (← links)
- 19016771. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES (Intel Corporation) (← links)
- 20250176255. Back-side Nanoribbon Removal (Intel) (← links)