Category:Andrey Vyatskikh of Hillsboro OR US
Andrey Vyatskikh
Andrey Vyatskikh from Hillsboro OR US has applied for patents in technology areas such as H01L21/683, H01L23/00, H01L25/065 with intel corporation.
Patents
Pages in category "Andrey Vyatskikh of Hillsboro OR US"
The following 26 pages are in this category, out of 26 total.
1
- 18375051. TRANSFER OF A 2D MATERIAL TO A TARGET SUBSTRATE (INTEL CORPORATION)
- 18375055. TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME (INTEL CORPORATION)
- 18375060. METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE (INTEL CORPORATION)
- 18375064. INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS (INTEL CORPORATION)
- 18473905. SELECTIVE LAYER TRANSFER (Intel Corporation)
- 18476248. ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES (Intel Corporation)
- 18477906. BACKSIDE POWER GATING (INTEL CORPORATION)
- 18478391. ARCHITECTURES FOR FACILITATING BONDING IN WAFER-LEVEL SELECTIVE TRANSFERS (INTEL CORPORATION)
- 18478626. DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS (INTEL CORPORATION)
- 18478686. SELECTIVE LAYER TRANSFER WITH GLASS PANELS (INTEL CORPORATION)
- 18478691. TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER (INTEL CORPORATION)
- 18478770. PROTECTIVE DEBONDING STACK FOR SELECTIVE TRANSFER (INTEL CORPORATION)
- 18478843. SELECTIVE TRANSFER OF THERMAL MANAGEMENT DIES (INTEL CORPORATION)
I
- Intel corporation (20250105046). SELECTIVE LAYER TRANSFER
- Intel corporation (20250107147). ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES
- Intel corporation (20250108459). PROTECTIVE DEBONDING STACK FOR SELECTIVE TRANSFER
- Intel corporation (20250112077). ARCHITECTURES FOR FACILITATING BONDING IN WAFER-LEVEL SELECTIVE TRANSFERS
- Intel corporation (20250112122). BACKSIDE POWER GATING
- Intel corporation (20250112196). SELECTIVE TRANSFER OF THERMAL MANAGEMENT DIES
- Intel corporation (20250112208). SELECTIVE LAYER TRANSFER WITH GLASS PANELS
- Intel corporation (20250113520). TRANSFER OF A 2D MATERIAL TO A TARGET SUBSTRATE
- Intel corporation (20250113521). DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS
- Intel corporation (20250113540). TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME
- Intel corporation (20250113547). INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS
- Intel corporation (20250113572). METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE
- Intel corporation (20250113573). TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER