18477414. METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES (INTEL CORPORATION)
METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
Organization Name
Inventor(s)
Rachel A. Steinhardt of Beaverton OR US
Kevin P. O'brien of Portland OR US
Ashish Verma Penumatcha of Hillsboro OR US
Carl Hugo Naylor of Portland OR US
Kirby Maxey of Hillsboro OR US
Pratyush P. Buragohain of Hillsboro OR US
Chelsey Dorow of Portland OR US
Mahmut Sami Kavrik of Eugene OR US
Wouter Mortelmans of Portland OR US
Marko Radosavljevic of Portland OR US
Uygar E. Avci of Portland OR US
Matthew V. Metz of Portland OR US
METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
This abstract first appeared for US patent application 18477414 titled 'METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
Original Abstract Submitted
Methods for doping 2D transistor devices and resulting architectures. The use and placement of oxide dopants, such as, but not limited to, GeOx, enable control over threshold voltage performance and contact resistance of 2D transistor devices. Architectures include distinct stoichiometry compositions.
- INTEL CORPORATION
- Rachel A. Steinhardt of Beaverton OR US
- Kevin P. O'brien of Portland OR US
- Ashish Verma Penumatcha of Hillsboro OR US
- Carl Hugo Naylor of Portland OR US
- Kirby Maxey of Hillsboro OR US
- Pratyush P. Buragohain of Hillsboro OR US
- Chelsey Dorow of Portland OR US
- Mahmut Sami Kavrik of Eugene OR US
- Wouter Mortelmans of Portland OR US
- Marko Radosavljevic of Portland OR US
- Uygar E. Avci of Portland OR US
- Matthew V. Metz of Portland OR US
- H01L27/092
- H01L29/06
- H01L29/26
- H01L29/66
- H01L29/775
- CPC H10D84/85
