Category:Matthew V. Metz of Portland OR US
Matthew V. Metz
Matthew V. Metz from Portland OR US has applied for patents in technology areas such as H01L29/08, H01L29/06, H01L29/12 with intel corporation.
Patents
Pages in category "Matthew V. Metz of Portland OR US"
The following 9 pages are in this category, out of 9 total.
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- Intel corporation (20250006791). PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN
- Intel corporation (20250006839). P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES
- Intel corporation (20250006840). NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Intel corporation (20250006841). TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Intel corporation (20250107147). ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES
- Intel corporation (20250113599). METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
