Category:Chelsey Dorow of Portland OR US
Chelsey Dorow
Chelsey Dorow from Portland OR US has applied for patents in technology areas such as H01L29/786, H01L21/02, H01L21/46 with intel corporation.
Patents
Pages in category "Chelsey Dorow of Portland OR US"
The following 14 pages are in this category, out of 14 total.
1
- 18375051. TRANSFER OF A 2D MATERIAL TO A TARGET SUBSTRATE (INTEL CORPORATION)
- 18375055. TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME (INTEL CORPORATION)
- 18375064. INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS (INTEL CORPORATION)
- 18476248. ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES (Intel Corporation)
- 18477414. METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES (INTEL CORPORATION)
- 18477906. BACKSIDE POWER GATING (INTEL CORPORATION)
- 18478691. TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER (INTEL CORPORATION)
I
- Intel corporation (20250107147). ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES
- Intel corporation (20250112122). BACKSIDE POWER GATING
- Intel corporation (20250113520). TRANSFER OF A 2D MATERIAL TO A TARGET SUBSTRATE
- Intel corporation (20250113540). TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME
- Intel corporation (20250113547). INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS
- Intel corporation (20250113573). TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER
- Intel corporation (20250113599). METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES