Category:Kirby Maxey of Hillsboro OR US
Kirby Maxey
Kirby Maxey from Hillsboro OR US has applied for patents in technology areas such as H01L23/48, H01L23/528, H01L27/092 with intel corporation.
Patents
Pages in category "Kirby Maxey of Hillsboro OR US"
The following 14 pages are in this category, out of 14 total.
1
- 18375055. TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME (INTEL CORPORATION)
- 18375060. METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE (INTEL CORPORATION)
- 18375064. INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS (INTEL CORPORATION)
- 18477414. METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES (INTEL CORPORATION)
- 18477906. BACKSIDE POWER GATING (INTEL CORPORATION)
- 18478626. DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS (INTEL CORPORATION)
- 18478691. TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER (INTEL CORPORATION)
I
- Intel corporation (20250112122). BACKSIDE POWER GATING
- Intel corporation (20250113521). DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS
- Intel corporation (20250113540). TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME
- Intel corporation (20250113547). INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS
- Intel corporation (20250113572). METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE
- Intel corporation (20250113573). TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER
- Intel corporation (20250113599). METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES