Category:Kevin P. O'brien of Portland OR US
Kevin P. O'brien
Kevin P. O'brien from Portland OR US has applied for patents in technology areas such as H01L29/08, H01L29/06, H01L29/12 with intel corporation.
Patents
Pages in category "Kevin P. O'brien of Portland OR US"
The following 15 pages are in this category, out of 15 total.
1
- 18476248. ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES (Intel Corporation)
- 18477414. METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES (INTEL CORPORATION)
- 18477906. BACKSIDE POWER GATING (INTEL CORPORATION)
- 18478626. DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS (INTEL CORPORATION)
- 18478691. TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER (INTEL CORPORATION)
I
- Intel corporation (20250006791). PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN
- Intel corporation (20250006839). P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES
- Intel corporation (20250006840). NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Intel corporation (20250006841). TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Intel corporation (20250107147). ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES
- Intel corporation (20250112122). BACKSIDE POWER GATING
- Intel corporation (20250113521). DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS
- Intel corporation (20250113573). TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER
- Intel corporation (20250113599). METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES