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Category:Gen Tsutsui of Glenmont NY (US)
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Pages in category "Gen Tsutsui of Glenmont NY (US)"
The following 8 pages are in this category, out of 8 total.
1
- 17822173. STACKED FET SUBSTRATE CONTACT simplified abstract (International Business Machines Corporation)
- 17930706. GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17936604. FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract (International Business Machines Corporation)
- 17960222. STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240113192). FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract
- International business machines corporation (20240121933). STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract