17930706. GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Andrew M. Greene of Slingerlands NY (US)
Shogo Mochizuki of Mechanicville NY (US)
Julien Frougier of Albany NY (US)
Gen Tsutsui of Glenmont NY (US)
GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17930706 titled 'GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
Simplified Explanation
The semiconductor device described in the patent application includes a first gate all around field effect transistor (GAA FET) and a second GAA FET within the same region type with relatively heterogenous channels within the same region.
- The first GAA FET has multiple first channels made of a first channel material, such as SiGecladded channels.
- The second GAA FET has multiple second channels made of a second channel material, such as SiGecladded channels, Si channels, or similar materials.
- The GAA FETs may have different channel structures, including different channel lengths.
- The heterogenous channels allow for improved device performance by tuning or adjusting channel mobility in similar region types in different locations or applications.
Potential Applications
This technology could be applied in:
- Advanced integrated circuits
- High-performance microprocessors
- Cutting-edge wafer technology
Problems Solved
- Enhanced device performance
- Improved channel mobility tuning
- Increased efficiency in semiconductor devices
Benefits
- Improved overall device performance
- Enhanced flexibility in channel structure design
- Potential for increased efficiency and speed in semiconductor devices
Potential Commercial Applications
Optimizing Semiconductor Device Performance for Various Applications
Original Abstract Submitted
A semiconductor device, such as an integrated circuit, microprocessor, wafer, or the like, includes a first gate all around field effect transistor (GAA FET) and second GAA FET within the same region type (e.g., p-type region or n-type region, etc.) with relatively heterogenous channels within the same region. The first GAA FET includes a plurality of first channels of a first channel material (e.g., SiGecladded channels). A second GAA FET includes a plurality of second channels of a second channel material (e.g., SiGecladded channels, Si channels, or the like). The GAA FETs may have different channel structures, such as relatively different channel lengths. The heterogenous channels may provide improved GAA FET device performance by allowing an ability to tune or adjust channel mobility of GAA FETs in similar region types in different locations or when utilized in different applications.
