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Category:G11C8/14
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Pages in category "G11C8/14"
The following 19 pages are in this category, out of 19 total.
1
- 17852593. MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME, AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17893681. STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17956102. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18158605. SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18492504. 3D SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18539062. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
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- US Patent Application 18361523. INTEGRATED CIRCUIT WITH ASYMMETRIC ARRANGEMENTS OF MEMORY ARRAYS simplified abstract
- US Patent Application 18362685. Memory Array Staircase Structure simplified abstract
- US Patent Application 18365068. Memory Array and Methods of Forming Same simplified abstract
- US Patent Application 18447232. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract
- US Patent Application 18447965. Polysilicon Removal In Word Line Contact Region Of Memory Devices simplified abstract