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Category:G11C11/4099
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Pages in category "G11C11/4099"
The following 14 pages are in this category, out of 14 total.
1
- 17689480. METHOD OF READING DATA IN A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17862472. STORAGE DEVICE AND ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17863037. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876046. VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17948582. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17953715. MEMORY DEVICE HAVING ROW DECODER ARRAY ARCHITECTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18196268. MEMORY ARRAY SEASONING simplified abstract (Micron Technology, Inc.)
- 18347852. SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)