17876046. VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
HI JUNG Kim of HWASEONG-SI (KR)
KWANG SOOK Noh of SUWON-SI (KR)
VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17876046 titled 'VOLATILE MEMORY DEVICE
Simplified Explanation
The abstract describes a volatile memory device that includes multiple sense amplifiers and mats connected to bit lines and complementary bit lines.
- The memory device includes multiple sense amplifiers and mats.
- The sense amplifiers are spaced apart from each other in different directions.
- The mats are positioned between the sense amplifiers and include bit lines and complementary bit lines.
- The bit lines and complementary bit lines are connected to the sense amplifiers.
Potential applications of this technology:
- This memory device can be used in various electronic devices that require volatile memory, such as computers, smartphones, and tablets.
- It can be used in data storage systems and servers to provide fast and efficient memory access.
Problems solved by this technology:
- The memory device solves the problem of limited memory access speed by using multiple sense amplifiers and mats.
- It addresses the issue of data loss by providing volatile memory that can store and retrieve data quickly.
Benefits of this technology:
- The memory device offers improved memory access speed due to the presence of multiple sense amplifiers and mats.
- It provides reliable and efficient volatile memory for storing and retrieving data.
- The device can enhance the overall performance of electronic devices by offering faster data processing capabilities.
Original Abstract Submitted
A volatile memory device may include; a first sense amplifier, a second sense amplifier spaced apart from the first sense amplifier in a first direction, a first mat disposed between the first sense amplifier and the second sense amplifier and including a first bit line connected to the first sense amplifier and a second bit line connected to the second sense amplifier, a third sense amplifier spaced apart from the second sense amplifier in a second direction, a fourth sense amplifier spaced apart from the third sense amplifier in the first direction, and a second mat disposed between the third sense amplifier and the fourth sense amplifier and including a first complementary bit line connected to the first sense amplifier.
