17689480. METHOD OF READING DATA IN A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
METHOD OF READING DATA IN A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME
Organization Name
Inventor(s)
HYOJUNG Jang of HWASEONG-SI (KR)
METHOD OF READING DATA IN A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17689480 titled 'METHOD OF READING DATA IN A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME
Simplified Explanation
The patent application describes a method for reading data in a nonvolatile memory device with multiple memory cells and states.
- The method involves performing a first read operation for a first state and a second read operation for a second state.
- For the first read operation, the cell counts for a valley of the first state are obtained, and a first read voltage level is determined based on these counts and reference parameters.
- A first sensing operation is then performed for the first state using the determined read voltage level.
- Similarly, for the second read operation, a second read voltage level is determined based on the cell counts and reference parameters for the second state.
- A second sensing operation is performed for the second state using the determined read voltage level.
Potential applications of this technology:
- Nonvolatile memory devices such as flash memory, solid-state drives (SSDs), and other storage devices can benefit from this method.
- It can be used in various electronic devices like smartphones, tablets, laptops, and servers to improve memory reading efficiency.
Problems solved by this technology:
- The method improves the accuracy and efficiency of reading data from nonvolatile memory cells with multiple states.
- It helps in distinguishing between different states of memory cells, ensuring reliable data retrieval.
Benefits of this technology:
- Enhanced performance and reliability of nonvolatile memory devices.
- Improved data reading efficiency, leading to faster access times and reduced power consumption.
- Enables more accurate and precise retrieval of data from memory cells, reducing errors and data corruption.
Original Abstract Submitted
In a method of reading data in a nonvolatile memory device including a plurality of memory cells having a plurality of states including a first state and a second state, a first read operation for the first state is performed, and a second read operation for the second state is performed. To perform the first read operation, cell counts for a valley of the first state are obtained by performing a valley cell count operation for the first state, a first read voltage level for the first state is determined based on the cell counts and at least one first reference parameter for the first state, and a first sensing operation for the first state is performed by using the first read voltage level. To perform the second read operation, a second read voltage level for the second state is determined based on the cell counts and at least one second reference parameter for the second state, and a second sensing operation for the second state is performed by using the second read voltage level.
