17948582. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
Contents
DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
Organization Name
Inventor(s)
Marco Sforzin of Cernusco Sul Naviglio (IT)
Luca Barletta of Gallarate (IT)
Marco Pietro Ferrari of Milano (IT)
DRIFT COMPENSATION FOR CODEWORDS IN MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17948582 titled 'DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
Simplified Explanation
- Memory device with circuitry for drift compensation for codewords - Adjusts reference voltage based on estimated weight of original codeword, mean of threshold voltage values, and total quantity of memory cells - Helps maintain accuracy of data stored in memory cells
Potential Applications
- Data storage devices - Embedded systems - Consumer electronics
Problems Solved
- Drift in memory cells affecting data accuracy - Ensuring reliability of stored data - Improving overall performance of memory devices
Benefits
- Increased data accuracy - Enhanced reliability of stored data - Improved performance of memory devices
Original Abstract Submitted
Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the array of memory cells using a reference voltage and determine an amount by which to adjust the reference voltage used to sense the codeword based on an estimated weight of the original codeword, a mean of threshold voltage values of each memory cell of the sensed codeword, and a total quantity of memory cells of the sensed codeword. The circuitry can further be configured to adjust the reference voltage used to sense the codeword by the determined amount.
