17863037. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF
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NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17863037 titled 'NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF
Simplified Explanation
The abstract describes a nonvolatile memory device that includes an operational amplifier and multiple feedback network circuits. The operational amplifier compares a reference voltage with a voltage of a feedback node. The first feedback network circuit divides an input voltage and transmits a voltage corresponding to the divided output voltage to the feedback node in response to a first feedback signal. Similarly, the second and third feedback network circuits generate and transmit voltages corresponding to their respective divided output voltages to the feedback node in response to second and third feedback signals.
- The nonvolatile memory device includes an operational amplifier for voltage comparison.
- There are three feedback network circuits that generate and transmit different voltages to the feedback node.
- The feedback network circuits divide the input voltage to generate the respective output voltages.
- The transmission of voltages to the feedback node is controlled by different feedback signals.
Potential Applications
- Nonvolatile memory devices
- Integrated circuits
- Electronic devices requiring memory storage
Problems Solved
- Efficient voltage comparison in nonvolatile memory devices
- Accurate generation and transmission of output voltages
- Improved performance and reliability of memory devices
Benefits
- Enhanced functionality and performance of nonvolatile memory devices
- Increased accuracy in voltage comparison and output voltage generation
- Improved reliability and durability of memory devices
Original Abstract Submitted
According to the present disclosure, a nonvolatile memory device may include an operational amplifier comparing a reference voltage with a voltage of a feedback node; a first feedback network circuit generating a first output voltage by dividing an input voltage in response to an output voltage of the operational amplifier, and transmitting a voltage corresponding to the first output voltage to the feedback node in response to a first feedback signal, a second feedback network circuit generating a second output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the second output voltage to the feedback node in response to a second feedback signal, and a third feedback network circuit generating a third output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the third output voltage to the feedback node in response to a third feedback signal.
