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Category:Nazila Haratipour of Portland OR (US)
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Pages in category "Nazila Haratipour of Portland OR (US)"
The following 16 pages are in this category, out of 16 total.
1
- 17936990. CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 17937043. FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT simplified abstract (Intel Corporation)
- 17957560. HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS simplified abstract (Intel Corporation)
- 17957591. SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES simplified abstract (Intel Corporation)
- 17957603. IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY simplified abstract (Intel Corporation)
- 17957945. DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (Intel Corporation)
- 17958202. SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS simplified abstract (Intel Corporation)
- 17958395. INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract (Intel Corporation)
I
- Intel corporation (20240105508). INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM simplified abstract
- Intel corporation (20240112730). DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract
- Intel corporation (20240113101). CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract
- Intel corporation (20240114692). INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract
- Intel corporation (20240114693). SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS simplified abstract
- Intel corporation (20240114694). FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT simplified abstract
- Intel corporation (20240114695). HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS simplified abstract
- Intel corporation (20240114696). IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY simplified abstract