Category:Suddhasattwa Nad of Chandler AZ US
Suddhasattwa Nad
Suddhasattwa Nad from Chandler AZ US has applied for patents in technology areas such as H01L23/15, H01L23/498, H01L23/522 with intel corporation.
Patents
Pages in category "Suddhasattwa Nad of Chandler AZ US"
The following 15 pages are in this category, out of 15 total.
1
- 18375209. DIE EMBEDDED IN GLASS LAYER WITH TWO-SIDE CONNECTIVITY (INTEL CORPORATION)
- 18470645. MICROELECTRONIC ASSEMBLIES HAVING A BRIDGE DIE OVER A GLASS PATCH (Intel Corporation)
- 18475326. HIGH PERFORMANCE MICROELECTRONIC ASSEMBLIES INCLUDING THROUGH-SILICON VIA BRIDGES WITH TOP DIE LAST APPROACH (Intel Corporation)
- 18475373. HIGH PERFORMANCE MICROELECTRONIC ASSEMBLIES INCLUDING THROUGH-SILICON VIA BRIDGES WITH TOP DIE FIRST APPROACH (Intel Corporation)
- 18477638. MICROELECTRONIC ASSEMBLIES WITH EDGE STRESS REDUCTION IN GLASS CORES (INTEL CORPORATION)
- 18478250. ANISOTROPIC CONDUCTIVE CONNECTIONS FOR INTERCONNECT BRIDGES AND RELATED METHODS (INTEL CORPORATION)
I
- Intel corporation (20250006616). HYBRID METALLIZATION SURFACES FOR INTEGRATED CIRCUIT PACKAGES
- Intel corporation (20250006671). SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER
- Intel corporation (20250006781). CARBON NANOFIBER CAPACITOR APPARATUS AND RELATED METHODS
- Intel corporation (20250096053). MICROELECTRONIC ASSEMBLIES HAVING A BRIDGE DIE OVER A GLASS PATCH
- Intel corporation (20250105209). HIGH PERFORMANCE MICROELECTRONIC ASSEMBLIES INCLUDING THROUGH-SILICON VIA BRIDGES WITH TOP DIE FIRST APPROACH
- Intel corporation (20250105222). HIGH PERFORMANCE MICROELECTRONIC ASSEMBLIES INCLUDING THROUGH-SILICON VIA BRIDGES WITH TOP DIE LAST APPROACH
- Intel corporation (20250112100). DIE EMBEDDED IN GLASS LAYER WITH TWO-SIDE CONNECTIVITY
- Intel corporation (20250112165). ANISOTROPIC CONDUCTIVE CONNECTIONS FOR INTERCONNECT BRIDGES AND RELATED METHODS
- Intel corporation (20250112175). MICROELECTRONIC ASSEMBLIES WITH EDGE STRESS REDUCTION IN GLASS CORES