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Intel corporation (20250006671). SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

From WikiPatents

SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

Organization Name

intel corporation

Inventor(s)

Marcel Arlan Wall of Phoenix AZ US

Hamid Azimi of Chandler AZ US

Rahul N. Manepalli of Chandler AZ US

Srinivas Venkata Ramanuja Pietambaram of Chandler AZ US

Darko Grujicic of Chandler AZ US

Steve Cho of Chandler AZ US

Thomas L. Sounart of Chandler AZ US

Gang Duan of Chandler AZ US

Jung Kyu Han of Chandler AZ US

Suddhasattwa Nad of Chandler AZ US

Benjamin Duong of Phoenix AZ US

Shayan Kaviani of Phoenix AZ US

SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

This abstract first appeared for US patent application 20250006671 titled 'SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

Original Abstract Submitted

an intermediary layer, such as a dry deposition layer or a surface finish, is deposited on at least one exposed surface of surfaces within a layer of a semiconductor substrate. the intermediary layer is deposited on at least an electrically conductive material within a cavity in a layer. the intermediary layer is deposited using a chemical deposition process such as physical vapor deposition, chemical vapor deposition or sputtering.

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