Intel corporation (20250006671). SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER
SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER
Organization Name
Inventor(s)
Marcel Arlan Wall of Phoenix AZ US
Rahul N. Manepalli of Chandler AZ US
Srinivas Venkata Ramanuja Pietambaram of Chandler AZ US
Darko Grujicic of Chandler AZ US
Thomas L. Sounart of Chandler AZ US
Jung Kyu Han of Chandler AZ US
Suddhasattwa Nad of Chandler AZ US
Benjamin Duong of Phoenix AZ US
Shayan Kaviani of Phoenix AZ US
SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER
This abstract first appeared for US patent application 20250006671 titled 'SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER
Original Abstract Submitted
an intermediary layer, such as a dry deposition layer or a surface finish, is deposited on at least one exposed surface of surfaces within a layer of a semiconductor substrate. the intermediary layer is deposited on at least an electrically conductive material within a cavity in a layer. the intermediary layer is deposited using a chemical deposition process such as physical vapor deposition, chemical vapor deposition or sputtering.
- Intel corporation
- Marcel Arlan Wall of Phoenix AZ US
- Hamid Azimi of Chandler AZ US
- Rahul N. Manepalli of Chandler AZ US
- Srinivas Venkata Ramanuja Pietambaram of Chandler AZ US
- Darko Grujicic of Chandler AZ US
- Steve Cho of Chandler AZ US
- Thomas L. Sounart of Chandler AZ US
- Gang Duan of Chandler AZ US
- Jung Kyu Han of Chandler AZ US
- Suddhasattwa Nad of Chandler AZ US
- Benjamin Duong of Phoenix AZ US
- Shayan Kaviani of Phoenix AZ US
- H01L23/00
- CPC H01L24/03