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Category:H10D62/822
Subcategories
This category has the following 11 subcategories, out of 11 total.
C
D
G
M
S
T
W
Pages in category "H10D62/822"
The following 15 pages are in this category, out of 15 total.
1
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19004029. FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM (Intel Corporation)
- 19007076. SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018287. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018870. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
I
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250142870). FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on May 1st, 2025
S
T
- Taiwan semiconductor manufacturing company, ltd. (20250142954). SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH
- Taiwan semiconductor manufacturing company, ltd. (20250151307). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025