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Category:G03F1/54
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This category has the following 5 subcategories, out of 5 total.
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Pages in category "G03F1/54"
The following 25 pages are in this category, out of 25 total.
1
- 18180210. REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383543. REFLECTIVE MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18432842. METHOD FOR FABRICATING EUV MASK AND PHOTOMASK USING THE EUV MASK simplified abstract (SK hynix Inc.)
- 18505485. Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank simplified abstract (Shin-Etsu Chemical Co., Ltd.)
- 18600273. Optical Component with Apodized Mask simplified abstract (Apple Inc.)
- 18620107. PHOTOMASKS HAVING INTERMEDIATE BARRIER LAYERS simplified abstract (Intel Corporation)
- 18982913. ELECTROCONDUCTIVE-FILM-COATED SUBSTRATE AND REFLECTIVE MASK BLANK (AGC Inc.)
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- Samsung electronics co., ltd. (20240219824). REFLECTIVE MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Sk hynix inc. (20240176226). METHOD FOR FABRICATING EUV MASK AND PHOTOMASK USING THE EUV MASK simplified abstract
- SK hynix Inc. patent applications on May 30th, 2024
T
- Taiwan semiconductor manufacturing company, ltd. (20240377720). EUV Lithography Mask With A Porous Reflective Multilayer Structure simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240377722). MASK AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
U
- US Patent Application 18230968. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18359954. Mask Defect Prevention simplified abstract
- US Patent Application 18366136. EUV Lithography Mask With A Porous Reflective Multilayer Structure simplified abstract
- US Patent Application 18366397. EUV PHOTOMASK AND RELATED METHODS simplified abstract