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Category:CPC H01L29/4175
Pages in category "CPC H01L29/4175"
The following 49 pages are in this category, out of 49 total.
1
- 18158505. BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract (International Business Machines Corporation)
- 18378943. NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN (SAMSUNG ELECTRONICS CO., LTD.)
- 18535421. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18615255. SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18894473. SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION (Nuvoton Technology Corporation Japan)
- 18894495. SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION (Nuvoton Technology Corporation Japan)
A
I
- INTEL CORPORATION Patent Application Trends in 2025
- Intel Corporation Patent Application Trends in 2025
- International business machines corporation (20240250136). BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract
- International business machines corporation (20240266409). BACKSIDE CONTACT FORMATION simplified abstract
- International Business Machines Corporation patent applications on August 8th, 2024
- International Business Machines Corporation patent applications on July 25th, 2024
N
Q
S
- SAMSUNG ELECTRONICS CO., LTD Patent Application Trends in 2024
- Samsung electronics co., ltd. (20240258388). SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20240258388). SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240282830). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240413213). NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN
- Samsung Electronics Co., Ltd. Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2024
- Samsung electronics Co., Ltd. Patent Application Trends in 2024
- Samsung electronics CO., LTD. Patent Application Trends in 2025
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2025
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- SUMITOMO ELECTRIC INDUSTRIES, LTD. Patent Application Trends in 2024
- Sumitomo Electric Industries, Ltd. Patent Application Trends in 2024
T
- Taiwan Semiconductor Manufacturing Co., Ltd Patent Application Trends in 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. Patent Application Trends in 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. Patent Application Trends in 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 30th, 2025
- Taiwan Semiconductor Manufacturing Company Patent Application Trends in 2025
- Taiwan semiconductor manufacturing company, ltd. (20240234526). SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379783). DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. Patent Application Trends in 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. Patent Application Trends in 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. Patent Application Trends in 2025
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on July 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024