SEMICONDUCTOR DEVICES

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Inventor(s)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18535421 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation: The semiconductor device described in the patent application includes a unique backside contact plug design that allows for improved connectivity and performance.

The device features a substrate insulating layer, a gate structure, and a source/drain region.
A backside contact plug is positioned below the source/drain region, offset from its central axis, and connected to it.
The source/drain region consists of two epitaxial layers with varying concentrations of a non-silicon element.
The upper surface of the backside contact plug is in contact with the second epitaxial layer.

Key Features and Innovation:

Offset backside contact plug design for improved connectivity.
Use of two epitaxial layers with different concentrations of a non-silicon element in the source/drain region.
Enhanced performance and reliability of the semiconductor device.

Potential Applications:

Semiconductor manufacturing
Electronics industry
Integrated circuits

Problems Solved:

Improved connectivity in semiconductor devices
Enhanced performance and reliability
Efficient use of non-silicon elements in epitaxial layers

Benefits:

Enhanced device performance
Improved connectivity
Increased reliability

Commercial Applications: Potential commercial applications include the production of advanced semiconductor devices for various electronic applications, leading to improved performance and reliability in electronic devices.

Questions about Semiconductor Devices: 1. How does the unique backside contact plug design improve connectivity in semiconductor devices? 2. What are the advantages of using two epitaxial layers with varying concentrations of a non-silicon element in the source/drain region?

Original Abstract Submitted

A semiconductor device includes a substrate insulating layer; a gate structure extending in one direction on the substrate insulating layer; a source/drain region outside of the gate structure; and a backside contact plug below the source/drain region to have a second central axis offset from a first central axis of the source/drain region in a horizontal direction, and connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer including a non-silicon element in a first concentration, and a second epitaxial layer on the first epitaxial layer and including a non-silicon element in a second concentration, higher than the first concentration, and at least a portion of an upper surface of the backside contact plug is in contact with the second epitaxial layer.