Category:Dominique A. Adams of Portland OR US
Dominique A. Adams
Dominique A. Adams from Portland OR US has applied for patents in technology areas such as H01L29/08, H01L29/06, H01L29/12 with intel corporation.
Patents
Pages in category "Dominique A. Adams of Portland OR US"
The following 5 pages are in this category, out of 5 total.
I
- Intel corporation (20250006791). PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN
- Intel corporation (20250006839). P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES
- Intel corporation (20250006840). NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT