Category:Young Gwang Yoon of Gyeonggi-do (KR)
Young Gwang Yoon
Young Gwang Yoon from Gyeonggi-do (KR) has applied for patents in technology areas such as H01L29/51, H01L21/225, H01L21/28 with sk hynix inc..
Patents
Pages in category "Young Gwang Yoon of Gyeonggi-do (KR)"
The following 9 pages are in this category, out of 9 total.
1
- 18323427. SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract (SK hynix Inc.)
- 18443297. SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18500115. SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS simplified abstract (SK hynix Inc.)
- 18607547. VERTICAL TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18674923. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANSISTOR HAVING A SILICIDE LAYER simplified abstract (SK hynix Inc.)
- 18811808. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SK hynix Inc.)
S
- Sk hynix inc. (20240162348). SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract
- Sk hynix inc. (20240347538). SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS simplified abstract
- Sk hynix inc. (20250072094). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME