18811808. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Young Gwang Yoon of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
This abstract first appeared for US patent application 18811808 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate formed to include a first active region and a second active region, first and second dielectric layer disposed over the first and second active regions, first and second gate electrode disposed over the first and second dielectric layers, respectively; and wherein the first and second active region have different impurity doping types from each other, and fluorine concentration of the first dielectric layer is higher than fluorine concentration of the second dielectric layer.