SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS

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SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18500115 titled 'SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS

Simplified Explanation:

This semiconductor device consists of four gate structures, each with a high-k gate dielectric layer containing specific dipole materials with varying concentrations.

Key Features and Innovation:

Four gate structures with high-k gate dielectric layers
Different dipole materials and concentrations in each gate structure

Potential Applications: This technology can be used in advanced semiconductor devices for various electronic applications.

Problems Solved:

Enhancing performance and efficiency of semiconductor devices
Improving gate dielectric properties

Benefits:

Increased functionality and reliability of semiconductor devices
Enhanced performance and efficiency

Commercial Applications: Potential commercial applications include the semiconductor industry for the development of advanced electronic devices.

Prior Art: Readers can explore prior research on high-k gate dielectric materials and their impact on semiconductor device performance.

Frequently Updated Research: Stay updated on the latest advancements in high-k gate dielectric materials and their applications in semiconductor devices.

Questions about Semiconductor Devices with High-k Gate Dielectric Layers: 1. What are the key features of semiconductor devices with high-k gate dielectric layers? 2. How do varying concentrations of dipole materials impact the performance of semiconductor devices?

Original Abstract Submitted

A semiconductor device includes a first gate structure including a first N-type high-k gate dielectric layer, a second gate structure comprising a first P-type high-k gate dielectric layer, a third gate structure including a second N-type high-k gate dielectric layer, and a fourth gate structure including a second P-type high-k gate dielectric layer. The first N-type high-k gate dielectric layer includes an N-type dipole material with a first concentration. The first P-type high-k gate dielectric layer includes a P-type dipole material with a second concentration. The second N-type high-k gate dielectric layer includes the N-type dipole material with a third concentration. The second P-type high-k gate dielectric layer includes the P-type dipole material with a fourth concentration. The first concentration is higher than the third concentration, and the second concentration is higher than the fourth concentration.