VERTICAL TRANSISTOR AND METHOD FOR FABRICATING THE SAME

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Inventor(s)

VERTICAL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18607547 titled 'VERTICAL TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The patent application is for a vertical transistor with different doping profiles in its upper and lower channel layers to reduce leakage current and improve contact resistance.

The semiconductor device includes a lower contact, a vertical channel layer with metal and oxygen components, and an upper contact.
The vertical channel layer has a gradual doping profile, with the metal component's concentration lowest in the middle region and increasing towards the upper contact.

Key Features and Innovation

Vertical transistor design with unique doping profiles in channel layers.
Reduction of leakage current and enhancement of contact resistance.
Gradual doping profile in the vertical channel layer for optimized performance.

Potential Applications

This technology can be applied in various semiconductor devices requiring efficient current control and improved contact resistance.

Problems Solved

Reduction of leakage current in vertical transistors.
Enhancement of contact resistance for better performance.
Optimization of doping profiles for improved device efficiency.

Benefits

Improved performance and efficiency in semiconductor devices.
Enhanced control over current flow.
Better contact resistance for stable operation.

Commercial Applications

Vertical transistors with optimized doping profiles can be used in a wide range of electronic devices, including smartphones, computers, and power management systems, to improve overall performance and efficiency.

Questions about Vertical Transistors

How do vertical transistors differ from traditional transistors?

Vertical transistors have a vertical structure that allows for better control over current flow and improved performance compared to traditional horizontal transistors.

What are the key advantages of using vertical transistors in semiconductor devices?

Vertical transistors offer reduced leakage current, enhanced contact resistance, and improved efficiency, making them ideal for various electronic applications.

Original Abstract Submitted

Various embodiments of the present invention disclosure are directed to a vertical transistor having different doping profiles in its upper channel layer and lower channel layer for reducing leakage current while enhancing contact resistance and a method for manufacturing the vertical transistor. According to an embodiment of the present invention disclosure, a semiconductor device comprises a lower contact, a vertical channel layer on the lower contact, the vertical channel layer including a metal component and an oxygen component, and an upper contact on the vertical channel layer. The vertical channel layer has a gradual doping profile in which a doping concentration of the metal component is lowest in an intermediate region and gradually increases from the intermediate region to the upper contact.