Category:Feng-Ming Chang of Hsinchu County TW
Feng-Ming Chang
Feng-Ming Chang from Hsinchu County TW has applied for patents in technology areas such as H01L23/48, H01L23/522, H01L23/528 with taiwan semiconductor manufacturing co., ltd..
Patents
Pages in category "Feng-Ming Chang of Hsinchu County TW"
The following 20 pages are in this category, out of 20 total.
1
- 18405318. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18411382. HIGH PERFORMANCE MEMORY DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18412129. MEMORY DEVICES WITH DIFFERENTLY SIZED ACTIVE REGIONS IN PERIPHERY CIRCUITS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18427248. MEMORY DEVICES HAVING MIDDLE STRAP AREAS FOR ROUTING POWER SIGNALS (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18428623. BIT LINE STRUCTURE FOR MEMORY DEVICES (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18469756. SRAM Middle Strap with Feedthrough Via (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18469856. MEMORY DEVICES WITH A BACKSIDE READ BIT LINE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18469911. MEMORY DEVICES WITH A BACKSIDE READ WORD LINE (Taiwan Semiconductor Manufacturing Co., Ltd.)
2
T
- Taiwan semiconductor manufacturing co., ltd. (20250096076). SRAM Middle Strap with Feedthrough Via
- Taiwan semiconductor manufacturing co., ltd. (20250098137). MEMORY DEVICES WITH A BACKSIDE READ BIT LINE
- Taiwan semiconductor manufacturing co., ltd. (20250098138). MEMORY DEVICES WITH A BACKSIDE READ WORD LINE
- Taiwan semiconductor manufacturing co., ltd. (20250120059). BIT LINE STRUCTURE FOR MEMORY DEVICES
- Taiwan semiconductor manufacturing co., ltd. (20250125222). HIGH PERFORMANCE MEMORY DEVICE
- Taiwan semiconductor manufacturing co., ltd. (20250126769). MEMORY DEVICES WITH DIFFERENTLY SIZED ACTIVE REGIONS IN PERIPHERY CIRCUITS
- Taiwan semiconductor manufacturing co., ltd. (20250126839). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20240260248). FIN-BASED WELL STRAPS FOR IMPROVING MEMORY MACRO PERFORMANCE
- Taiwan semiconductor manufacturing company, ltd. (20250006811). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250131958). MEMORY DEVICES HAVING MIDDLE STRAP AREAS FOR ROUTING POWER SIGNALS