SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250006811 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a semiconductor device and a manufacturing method thereof are provided. the semiconductor device includes a semiconductor substrate, semiconductor nanosheets vertically stacked upon one another and disposed above the semiconductor substrate, a gate structure surrounding each of the semiconductor nanosheets, inner spacers laterally covering the gate structure and interposed between the semiconductor nanosheets, and source/drain (s/d) regions disposed over the semiconductor substrate and laterally abutting the semiconductor nanosheets. the semiconductor nanosheets serve as channel regions. a bottommost inner spacer of the inner spacers underlying a bottommost semiconductor nanosheet of the semiconductor nanosheets is thinner than a topmost inner spacer of the inner spacers underlying a topmost semiconductor nanosheet of the semiconductor nanosheets. the s/d regions are separated from the gate structure through the inner spacers.