Taiwan semiconductor manufacturing co., ltd. (20250125222). HIGH PERFORMANCE MEMORY DEVICE
HIGH PERFORMANCE MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Feng-Ming Chang of Hsinchu County TW
Jui-Lin Chen of Taipei City TW
HIGH PERFORMANCE MEMORY DEVICE
This abstract first appeared for US patent application 20250125222 titled 'HIGH PERFORMANCE MEMORY DEVICE
Original Abstract Submitted
a semiconductor structure according to the present disclosure includes a first memory cell that includes a first pull-down transistor and a first pull-up transistor sharing a first gate structure extending along a first direction, a second pull-down transistor and a second pull-up transistor sharing a second gate structure extending along the first direction, a first pass-gate transistor having a third gate structure spaced apart but aligned with the second gate structure along the first direction, and a second pass-gate transistor having a fourth gate structure spaced apart but aligned with the first gate structure along the first direction, a frontside interconnect structure disposed over the first memory device, a backside interconnect structure disposed below the first memory device. a source of the second pull-down transistor is electrically coupled to the backside interconnect structure by way of a first backside contact via.