20250221067. Image Sensor Method Manufacturing S (Taiwan Semiconductor Manufacturing , .)
IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
Abstract: the present disclosure relates to an image sensor integrated chip (ic) structure. the image sensor ic structure includes a plurality of image sensing elements respectively disposed within a plurality of pixel regions of a pixel array within a substrate. an inter-level dielectric (ild) structure is disposed on a surface of the substrate and surrounds one or more interconnects. a plurality of three-dimensional (3d) capacitors are arranged within respective ones of the plurality of pixel regions and are coupled to one of the plurality of image sensing elements by the one or more interconnects. the plurality of 3d capacitors include a base region extending in parallel to the surface of the substrate and one or more fingers extending outward from the base region along a direction perpendicular to the surface of the substrate.
Inventor(s): Min-Feng Kao, Hsing-Chih Lin, Jen-Cheng Liu, Dun-Nian Yaung
CPC Classification: H10F39/803 (No explanation available)
Search for rejections for patent application number 20250221067