DEEP TRENCH CAPACITORS IN MULTI-CORE INTEGRATED CIRCUIT DEVICE PACKAGE SUBSTRATES

Abstract: an apparatus is provided which comprises: a substrate core comprising a first core layer bonded with a second core layer, one or more redistribution layers on a first substrate core surface, one or more conductive contacts on a second substrate core surface opposite the first substrate core surface, one or more vias through the substrate core, a first circuit component embedded entirely within a cavity in the first core layer, the first circuit component coupled with a first redistribution layers surface, wherein the first circuit component and the first core layer have substantially equivalent heights, and wherein the first circuit component comprises a deep trench capacitor, and one or more integrated circuit devices coupled with a second redistribution layers surface opposite the first redistribution layers surface. other embodiments are also disclosed and claimed.

Inventor(s): Jeremy Ecton, Bohan Shan, Numair Ahmed, Nevin Erturk, Ziyin Lin, Ryan Carrazzone, Hongxia Feng, Hiroki Tanaka, Haobo Chen, Kyle Arrington, Jose Waimin, Srinivas Pietambaram, Gang Duan, Dingying Xu, Mohit Gupta, Brandon Marin, Xiaoying Guo, Clay Arrington

CPC Classification: H01L25/16 (the devices being of types provided for in two or more different main groups of groups - , or in a single subclass of , , e.g. forming hybrid circuits)

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