18374600. TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER (INTEL CORPORATION)
TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER
Organization Name
Inventor(s)
Chiao-Ti Huang of Portland OR US
Anand S. Murthy of Portland OR US
Ting-Hsiang Hung of Beaverton OR US
Chung-Hsun Lin of Portland OR US
Oleg Golonzka of Beaverton OR US
Yang Zhang of Rio Rancho NM US
Chia-Ching Lin of Portland OR US
TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER
This abstract first appeared for US patent application 18374600 titled 'TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER
Original Abstract Submitted
Trench contact structures with etch stop layers, and methods of fabricating trench contact structures with etch-stop layers, are described. In an example, an integrated circuit structure includes a fin structure. An epitaxial source or drain structure is on the fin structure. An isolation structure is laterally adjacent to sides of the fin structure. A dielectric layer is on at least a portion of a top surface of the isolation structure and partially surrounds the epitaxial source or drain structure and leaves an exposed portion of the epitaxial source or drain structure. A conductive trench contact structure is on the exposed portion of the epitaxial source or drain structure. The conductive trench contact structure does not extend into the isolation structure.
- INTEL CORPORATION
- Guowei Xu of Portland OR US
- Chiao-Ti Huang of Portland OR US
- Feng Zhang of Hillsboro OR US
- Robin Chao of Portland OR US
- Tao Chu of Portland OR US
- Anand S. Murthy of Portland OR US
- Ting-Hsiang Hung of Beaverton OR US
- Chung-Hsun Lin of Portland OR US
- Oleg Golonzka of Beaverton OR US
- Yang Zhang of Rio Rancho NM US
- Chia-Ching Lin of Portland OR US
- H01L29/06
- H01L21/8238
- H01L27/092
- H01L29/08
- H01L29/66
- H01L29/78
- CPC H10D62/115