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| − | '''Summary of the patent applications from TDK CORPORATION on November 30th, 2023'''
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| − | TDK Corporation has recently filed several patents for various technologies. These patents cover a range of inventions, including magneto-resistive elements, magnetization rotational elements, acoustic devices, power conversion apparatuses, antenna devices, multilayer ceramic electronic devices, electronic devices with chip components, and dielectric compositions.
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| − | The magneto-resistive element patent application describes a structure consisting of two ferromagnetic layers separated by a non-magnetic layer. The non-magnetic layer has a central region and an outer circumferential region, with the latter having a greater thickness. This design aims to improve the performance of the magneto-resistive element.
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| − | The magnetization rotational element patent application focuses on a spin-orbit torque wiring and a ferromagnetic layer. Spins are injected from the spin-orbit torque wiring into the ferromagnetic layer, and the spin-orbit torque wiring includes multiple spin generation layers and insertion layers. The insertion layers have a lower electrical resistivity than the spin generation layers, enhancing the efficiency of the magnetization rotational element.
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| − | The acoustic device patent application describes two vibrating bodies with different vibration frequencies placed on a base material. The arrangement of the vibrating bodies on the base material is in the same direction, allowing for improved acoustic performance.
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| − | The power conversion apparatus patent application includes a sensor, a signal generation circuit, and a control circuit. The sensor generates a detection signal, which is processed by the signal generation circuit to generate a second detection signal. The control circuit is responsible for controlling the operation of the power conversion circuit. This design aims to improve the accuracy and efficiency of power conversion.
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| − | The antenna device patent application focuses on multiple layers and ground patterns. The antenna layer includes radiation conductors and ground pillars, and the ground patterns have three areas, with the third area connecting the first two areas. This design helps improve the performance and efficiency of the antenna device.
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| − | The multilayer ceramic electronic device patent application describes an element body with internal electrode layers and external electrodes. The external electrodes consist of two layers, with the first layer in direct contact with the element body and the second layer on top. The composition and structure of the external electrodes aim to enhance the performance and reliability of the ceramic electronic device.
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| − | The electronic device patent application focuses on a chip component, case, resin, and conductive terminal. The conductive terminal has an inner electrode portion connected to the terminal electrode of the chip component. The inner electrode portion includes a space formation portion for a conductive agent, improving the electrical connectivity of the electronic device.
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| − | The dielectric composition patents describe compositions with specific structures and phases to enhance their dielectric properties. These compositions can be used in various applications that require high dielectric constant materials.
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| − | Summary of patents filed by TDK Corporation:
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| − | * Magneto-resistive element with specific layers and regions.
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| − | * Magnetization rotational element with a spin-orbit torque wiring and a ferromagnetic layer.
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| − | * Acoustic device with two vibrating bodies and a base material.
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| − | * Power conversion apparatus with a sensor, signal generation circuit, and control circuit.
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| − | * Antenna device with multiple layers and ground patterns.
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| − | * Multilayer ceramic electronic device with an element body and external electrodes.
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| − | * Electronic device with a chip component, case, resin, and conductive terminal.
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| − | * Dielectric compositions with specific structures and phases.
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| − | Notable applications:
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| − | * Improved performance and efficiency of magneto-resistive elements.
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| − | * Enhanced efficiency of magnetization rotational elements.
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| − | * Improved acoustic performance of devices.
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| − | * Increased accuracy and efficiency of power conversion.
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| − | * Improved performance and efficiency of antennas.
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| − | * Enhanced performance and reliability of ceramic electronic devices.
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| − | * Improved electrical connectivity of electronic devices.
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| − | * Dielectric compositions for applications requiring high dielectric constant materials.
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| | ==Patent applications for TDK CORPORATION on November 30th, 2023== | | ==Patent applications for TDK CORPORATION on November 30th, 2023== |
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| | Yohei SATO | | Yohei SATO |
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| − | '''Brief explanation'''
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| − | The patent application describes a substrate processing apparatus that includes a lower jig plate, columnar members, and a heat dissipating column.
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| − | * The lower jig plate is used to arrange a substrate that needs to be pressurized.
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| − | * The columnar members support the lower jig plate.
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| − | * The heat dissipating column comes into direct or indirect contact with the lower jig plate.
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| − | * The heat dissipating column has a higher heat dissipation property compared to the columnar members.
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| − | * The purpose of the heat dissipating column is to efficiently dissipate heat generated during substrate processing.
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| − | * This innovation aims to improve the overall performance and efficiency of the substrate processing apparatus.
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| − |
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| − | '''Abstract'''
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| − | A substrate processing apparatus including a lower jig plate for arranging a substrate which is an object to be pressurized, columnar members supporting the lower jig plate, and a heat dissipating column contacting the lower jig plate directly or indirectly and having a higher heat dissipation property than the columnar members.
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| | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18323618. SUBSTRATE PROCESSING APPARATUS simplified abstract|18323618]])=== | | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18323618. SUBSTRATE PROCESSING APPARATUS simplified abstract|18323618]])=== |
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| | Yohei SATO | | Yohei SATO |
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| − | '''Brief explanation'''
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| − | The patent application describes a substrate processing apparatus that includes a lower jig plate and a support member.
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| − | * The lower jig plate is used to arrange a substrate that will be pressurized.
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| − | * The support member has an installation portion where columnar members are installed to support the lower jig plate.
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| − | * The columnar members are placed in the installation portion based on the in-plane distribution of the load applied to the lower jig plate.
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| − | * The purpose of this arrangement is to provide efficient support for the substrate during processing.
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| − | * This design helps to evenly distribute the load on the lower jig plate, ensuring uniform pressure on the substrate.
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| − | * The substrate processing apparatus aims to simplify the processing of substrates and improve the overall efficiency of the process.
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| − |
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| − | '''Abstract'''
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| − | A substrate processing apparatus having a lower jig plate for arranging a substrate as an object to be pressurized, a support member including an installation portion for installing columnar members supporting the lower jig plate , in which the columnar members are placed to the installation portion in accordance with a in-plane distribution of a load applied to the lower jig plate
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| | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18323467. SUBSTRATE PROCESSING APPARATUS simplified abstract|18323467]])=== | | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18323467. SUBSTRATE PROCESSING APPARATUS simplified abstract|18323467]])=== |
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| | Yohei SATO | | Yohei SATO |
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| − |
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| − | '''Brief explanation'''
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| − | The patent application describes a substrate processing apparatus that can apply a uniform load to an object to be pressurized.
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| − | * The apparatus includes a lower jig plate for arranging the substrate, which is the object to be pressurized.
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| − | * An upper jig plate is used to apply pressure to the substrate arranged on the lower jig plate.
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| − | * A support member is included to support the lower jig plate and provide a support force according to the in-plane distribution of the load applied to the lower jig plate.
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| − |
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| − | '''Abstract'''
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| − | Provided is a substrate processing apparatus capable applying a uniform load to an object to be pressurized. The substrate processing apparatus includes a lower jig plate for arranging a substrate which is an object to be pressurized, an upper jig plate applying pressure to the substrate arranged to the lower jig plate , and a support member supporting the lower jig plate and providing a support force to the lower jig plate in accordance with a in-plane distribution of a load applied to the lower jig plate
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| | | | |
| | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18323745. SUBSTRATE PROCESSING APPARATUS simplified abstract|18323745]])=== | | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18323745. SUBSTRATE PROCESSING APPARATUS simplified abstract|18323745]])=== |
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| | Yohei SATO | | Yohei SATO |
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| − | '''Brief explanation'''
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| − | The patent application describes a substrate processing apparatus that applies pressure to a substrate.
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| − | * The apparatus includes an upper jig plate and a lower jig plate.
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| − | * The substrate, which is the object to be pressurized, is arranged on the upper jig plate.
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| − | * The lower jig plate is positioned below the upper jig plate.
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| − | * An installation base is provided on the lower jig plate, where the substrate is arranged.
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| − | * The installation base is temporarily fixed to the lower jig plate in a deformable manner.
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| − |
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| − | '''Abstract'''
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| − | A substrate processing apparatus applies pressure to a substrate which is an object to be pressurized arranged on an upper jig plate . The substrate processing apparatus includes a lower jig plate arranged below the upper jig plate , an installation base provided on the lower jig plate and the substrate is arranged; and the installation base is temporarily fixed to the installation base in a deformable manner.
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| | ===CORRECTION APPARATUS FOR ANGLE SENSOR, AND ANGLE SENSOR ([[US Patent Application 18233474. CORRECTION APPARATUS FOR ANGLE SENSOR, AND ANGLE SENSOR simplified abstract|18233474]])=== | | ===CORRECTION APPARATUS FOR ANGLE SENSOR, AND ANGLE SENSOR ([[US Patent Application 18233474. CORRECTION APPARATUS FOR ANGLE SENSOR, AND ANGLE SENSOR simplified abstract|18233474]])=== |
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| | Shinichirou MOCHIZUKI | | Shinichirou MOCHIZUKI |
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| − | '''Brief explanation'''
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| − | The patent application describes an angle sensor that generates an angle detection value based on two detection signals.
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| − | * Angle sensor generates angle detection value using two detection signals
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| − | A correction apparatus is used to perform correction processing on the detection signals.
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| − | * Correction apparatus corrects the detection signals
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| − | The correction processing involves adding a first correction value to the first detection signal and a second correction value to the second detection signal.
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| − | * First correction value is added to the first detection signal
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| − | * Second correction value is added to the second detection signal
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| − | If no correction processing is performed, the angle detection value contains an Nth-order angle error component with a period of T/N, where T is the period of variation in the angle to be detected.
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| − | * Angle detection value contains Nth-order angle error component with period T/N
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| − | The first and second detection signals also contain an (N-1)th-order signal error component and an (N+1)th-order signal error component.
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| − | * First and second detection signals contain (N-1)th-order and (N+1)th-order signal error components
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| − |
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| − | The order of the first and second correction values is either N-1 or N+1.
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| − | * Order of first and second correction values is N-1 or N+1
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| − |
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| − | '''Abstract'''
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| − | An angle sensor generates an angle detection value based on a first and a second detection signal. A correction apparatus performs correction processing for generating a first corrected detection signal by adding a first correction value to the first detection signal and generating a second corrected detection signal by adding a second correction value to the second detection signal. When an angle to be detected varies with a period T and if no correction processing is performed, the angle detection value contains an Nth-order angle error component varying with a period of T/N. Each of the first and second detection signals contains an (N−1)th-order signal error component and an (N+1)th-order signal error component. The order of the first and second correction values is N−1 or N+1.
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| | ===POLYMER PARTICLE CONTAINING MAGNETIC MATERIAL, MEDIUM FOR SENSORS, AND SENSOR DEVICE ([[US Patent Application 18175036. POLYMER PARTICLE CONTAINING MAGNETIC MATERIAL, MEDIUM FOR SENSORS, AND SENSOR DEVICE simplified abstract|18175036]])=== | | ===POLYMER PARTICLE CONTAINING MAGNETIC MATERIAL, MEDIUM FOR SENSORS, AND SENSOR DEVICE ([[US Patent Application 18175036. POLYMER PARTICLE CONTAINING MAGNETIC MATERIAL, MEDIUM FOR SENSORS, AND SENSOR DEVICE simplified abstract|18175036]])=== |
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| | Yusuke ARIAKE | | Yusuke ARIAKE |
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| − | '''Brief explanation'''
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| − | The patent application describes a polymer particle that contains magnetic material.
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| − | * The particle has three layers: a core, an intermediate layer, and a polymer layer.
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| − | * The core contains magnetic fine particles with an average diameter between 5 nm and 30 nm.
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| − | * The intermediate layer has a lower concentration of magnetic fine particles compared to the core.
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| − | * The polymer layer covers the intermediate layer.
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| − | * The thickness of the intermediate layer is between 5% and 60% of the radius of the particle.
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| − | '''Abstract'''
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| − | A polymer particle containing magnetic material includes a core, an intermediate layer, and a polymer layer. The core includes magnetic fine particles having an average diameter of 5 nm or more and 30 nm or less. The intermediate layer is located outside the core and has a lower concentration of the magnetic fine particles than the core. The polymer layer covers the intermediate layer. A thickness of the intermediate layer is 5% or more and 60% or less of a radius of the polymer particle containing magnetic material.
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| | ===MAGNETIC SENSOR ([[US Patent Application 18362011. MAGNETIC SENSOR simplified abstract|18362011]])=== | | ===MAGNETIC SENSOR ([[US Patent Application 18362011. MAGNETIC SENSOR simplified abstract|18362011]])=== |
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| | Kentaro HARADA | | Kentaro HARADA |
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| − | '''Brief explanation'''
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| − | The abstract of the patent application describes a magnetic sensor that can reduce the strength of a magnetic field in a direction perpendicular to the direction in which it detects the magnetic field at a faster rate.
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| − |
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| − | * The magnetic sensor is designed to detect magnetic fields.
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| − | * It can also attenuate or weaken the strength of the magnetic field.
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| − | * The attenuation is more effective in the direction perpendicular to the direction of magnetic field detection.
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| − | * The sensor provides a higher rate of attenuation in the perpendicular direction compared to the magnetic field detection direction.
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| − | '''Abstract'''
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| − | A magnetic sensor is provided that can attenuate a magnetic field in a direction that is perpendicular to the magnetic field detecting direction at a higher rate than the magnetic field in the magnetic field detecting direction.
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| | ===MAGNETORESISTANCE EFFECT ELEMENT ([[US Patent Application 18234147. MAGNETORESISTANCE EFFECT ELEMENT simplified abstract|18234147]])=== | | ===MAGNETORESISTANCE EFFECT ELEMENT ([[US Patent Application 18234147. MAGNETORESISTANCE EFFECT ELEMENT simplified abstract|18234147]])=== |
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| | Tomoyuki SASAKI | | Tomoyuki SASAKI |
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| − | '''Brief explanation'''
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| − | The patent application describes a magnetoresistance effect element consisting of two ferromagnetic metal layers and a tunnel barrier layer in between.
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| − | * The tunnel barrier layer is made up of a chemical compound expressed as ABO and has a disordered spinel structure.
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| − | * A represents either Mg or Zn, which are divalent cations.
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| − | * B represents a trivalent cation that can be Al, Ga, or In, among others.
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| − | * The innovation lies in the specific composition and structure of the tunnel barrier layer, which enhances the magnetoresistance effect in the element.
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| − |
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| − | '''Abstract'''
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| − | A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of ABO, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.
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| | ===DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE ([[US Patent Application 18308294. DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE simplified abstract|18308294]])=== | | ===DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE ([[US Patent Application 18308294. DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE simplified abstract|18308294]])=== |
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| | Toshihiro IGUCHI | | Toshihiro IGUCHI |
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| − | '''Brief explanation'''
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| − | The patent application describes a dielectric composition that contains main phases with a tungsten bronze structure and grain boundaries between them.
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| − | * The dielectric composition includes rare earth elements such as La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy.
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| − | * The concentration ratio of rare earth elements in the central portions of the main phases to the peripheral portions is 0.2 or less.
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| − |
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| − | '''Abstract'''
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| − | A dielectric composition includes main phases having a tungsten bronze structure and grain boundaries existing between the main phases. At least one or more rare earth elements selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy is RE. A concentration ratio of RE in central portions of the main phases to RE in peripheral portions of the main phases is 0.2 or less.
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| | ===INDUCTOR ([[US Patent Application 18324609. INDUCTOR simplified abstract|18324609]])=== | | ===INDUCTOR ([[US Patent Application 18324609. INDUCTOR simplified abstract|18324609]])=== |
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| | Hajime AMANO | | Hajime AMANO |
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| − | '''Brief explanation'''
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| − | - The patent application describes an inductor that consists of a magnetic core portion and a coil portion.
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| − | - The magnetic core portion is made up of a multilayer film, with alternating layers of a nanogranular magnetic film and a soft magnetic alloy film.
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| − | - The nanogranular magnetic film has a unique structure where nano-domains of a first phase are dispersed in a second phase.
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| − | - The first phase contains Fe and/or Co, while the second phase contains O, N, and/or F.
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| − | - The volume ratio of the first phase to the total volume of the first and second phases is limited to 60% or less.
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| − | - The soft magnetic alloy film contains Fe and/or Co, and the total amount of Fe, Co, and Ni in the film is at least 70%.
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| − | - The innovation in this patent application lies in the specific composition and structure of the magnetic core portion, which aims to improve the performance and efficiency of the inductor.
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| − |
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| − | '''Abstract'''
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| − | An inductor includes a magnetic core portion and a coil portion. The magnetic core portion is a multilayer film in which a nanogranular magnetic film and a soft magnetic alloy film are alternately stacked. The nanogranular magnetic film has a structure in which nano-domains of a first phase are dispersed in a second phase. The first phase contains one or more selected from Fe and Co, and the second phase contains one or more selected from O, N, and F. The volume ratio of the first phase to the total volume of the first phase and the second phase is 60% or less. The soft magnetic alloy film contains one or more selected from Fe and Co. The total amount of Fe, Co, and Ni in the soft magnetic alloy film is 70 at % or more.
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| | ===DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT ([[US Patent Application 18315563. DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT simplified abstract|18315563]])=== | | ===DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT ([[US Patent Application 18315563. DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT simplified abstract|18315563]])=== |
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| | Yuichiro SUEDA | | Yuichiro SUEDA |
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| − | '''Brief explanation'''
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| − | - The patent application describes a dielectric composition that includes dielectric grains, a grain boundary phase, and segregation grains.
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| − | - The dielectric grains contain a main component represented by a composition formula [(CaSr)O][(TiHfZr)O].
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| − | - The segregation grains contain at least Ca, Si, and O.
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| − | - There are two types of segregation grains: first segregation grains that contain Mn and second segregation grains that do not contain Mn.
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| − | - The number density of first segregation grains (N1) in the dielectric composition is more than 0.23 and 1.00 or less, relative to the number density of second segregation grains (N2).
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| − | - The patent application aims to provide a dielectric composition with specific segregation grain characteristics for improved performance in certain applications.
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| − |
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| − | '''Abstract'''
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| − | A dielectric composition, including: dielectric grains containing a main component represented by a composition formula [(CaSr)O][(TiHfZr)O] (m is more than 1.020); a grain boundary phase located between the dielectric grains; and segregation grains each containing at least Ca, Si, and O. A first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O, and a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O. N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.
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| | | | |
| | ===DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE ([[US Patent Application 18308343. DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE simplified abstract|18308343]])=== | | ===DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE ([[US Patent Application 18308343. DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE simplified abstract|18308343]])=== |
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| | Toshihiro IGUCHI | | Toshihiro IGUCHI |
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| − |
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| − | '''Brief explanation'''
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| − | The abstract of the patent application describes a dielectric composition that consists of main phases with a tungsten bronze structure and additional phases containing Ba (barium) and Si (silicon).
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| − |
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| − | * The dielectric composition includes main phases with a tungsten bronze structure.
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| − | * The composition also contains first segregation phases that consist of Ba and Si.
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| − | * The presence of Ba and Si in the composition contributes to its dielectric properties.
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| − | * The tungsten bronze structure of the main phases enhances the overall performance of the dielectric composition.
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| − | * The dielectric composition can be used in various applications that require high dielectric constant materials.
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| − |
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| − | '''Abstract'''
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| − | A dielectric composition includes main phases having a tungsten bronze structure and first segregation phases. The first segregation phases include Ba and Si.
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| | | | |
| | ===ELECTRONIC DEVICE ([[US Patent Application 18303703. ELECTRONIC DEVICE simplified abstract|18303703]])=== | | ===ELECTRONIC DEVICE ([[US Patent Application 18303703. ELECTRONIC DEVICE simplified abstract|18303703]])=== |
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| | Takaaki SATO | | Takaaki SATO |
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| − |
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| − | '''Brief explanation'''
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| − | The patent application describes an electronic device with a chip component, case, resin, and conductive terminal.
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| − | * The chip component has a terminal electrode.
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| − | * The case has a recess to hold the chip component.
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| − | * The recess is filled with resin.
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| − | * The conductive terminal can be attached to the case.
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| − | * The conductive terminal has an inner electrode portion inside the recess.
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| − | * The inner electrode portion is connected to the terminal electrode.
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| − | * The inner electrode portion has a space formation portion.
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| − | * The space formation portion creates a filling space for a conductive agent.
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| − | * The filling space is located closer to the bottom surface of the recess than to the opening.
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| − |
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| − | '''Abstract'''
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| − | An electronic device includes a chip component, a case, a resin, and a conductive terminal. The chip component includes a terminal electrode. The case includes an accommodation recess for accommodating the chip component. The resin is filled in the accommodation recess. The conductive terminal is attachable to the case. The conductive terminal includes an inner electrode portion disposed in the accommodation recess and connected to the terminal electrode. The inner electrode portion includes a space formation portion forming a filling space for a conductive agent with an outer surface of the chip component at a position closer to a bottom surface than to an opening of the accommodation recess.
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| | ===MULTILAYER CERAMIC ELECTRONIC DEVICE ([[US Patent Application 18324344. MULTILAYER CERAMIC ELECTRONIC DEVICE simplified abstract|18324344]])=== | | ===MULTILAYER CERAMIC ELECTRONIC DEVICE ([[US Patent Application 18324344. MULTILAYER CERAMIC ELECTRONIC DEVICE simplified abstract|18324344]])=== |
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| | Toshihiro IGUCHI | | Toshihiro IGUCHI |
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| − |
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| − | '''Brief explanation'''
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| − | The patent application describes a multilayer ceramic electronic device with an element body and external electrodes.
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| − | * The device includes a ceramic layer and an internal electrode layer within the element body.
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| − | * The external electrode is formed on the outer surface of the element body and is connected to part of the internal electrode layer.
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| − | * The external electrode consists of two layers: a first layer in direct contact with the element body and a second layer on top of the first layer.
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| − | * The first layer contains a combination of a first insulator phase and first metal phases, while the second layer contains a second insulator phase and second metal phases.
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| − | * The area ratio of the first metal phases in the first layer is between 8% and 30%.
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| − | * The area ratio of the second metal phases in the second layer is higher than the area ratio of the first metal phases in the first layer.
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| − | * The first metal phases in the first layer have an average aspect ratio of 3.5 or more.
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| − |
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| − | '''Abstract'''
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| − | A multilayer ceramic electronic device includes an element body including a ceramic layer and an internal electrode layer, and an external electrode formed on an outer surface of the element body and electrically connected to part of the internal electrode layer. The external electrode includes a first layer in direct contact with the element body and containing a first insulator phase and first metal phases, and a second layer in contact with an outer surface of the first layer and containing a second insulator phase and second metal phases. An area ratio of the first metal phases in the first layer is more than 8% and 30% or less. An area ratio of the second metal phases in the second layer is larger than the area ratio of the first metal phases in the first layer. The first metal phases have an average aspect ratio of 3.5 or more.
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| | ===ANTENNA DEVICE ([[US Patent Application 18449297. ANTENNA DEVICE simplified abstract|18449297]])=== | | ===ANTENNA DEVICE ([[US Patent Application 18449297. ANTENNA DEVICE simplified abstract|18449297]])=== |
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| | Yasuyuki HARA | | Yasuyuki HARA |
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| − | '''Brief explanation'''
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| − | The patent application describes an antenna device with multiple layers and ground patterns.
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| − | * The antenna layer has two radiation conductors and ground pillars surrounding them.
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| − | * The ground patterns have three areas - one overlapping a space surrounded by the first ground pillars, another overlapping a space surrounded by the second ground pillars, and a third area connecting the first two areas.
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| − | * The width of the third area is smaller than the width of the first two areas in a perpendicular direction.
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| − | * This design helps in improving the performance and efficiency of the antenna device.
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| − |
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| − | '''Abstract'''
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| − | Disclosed herein is an antenna device that includes a filter layer, an antenna layer, a divider layer, and ground patterns. The antenna layer has first and second radiation conductors and first and second ground pillars that surround the first and second radiation conductors, respectively. Each of the first and second ground patterns has a first area that overlaps a first space surrounded by the first ground pillars, a second area that overlaps a second space surrounded by the plurality of second ground pillars, and a third area that connects the first and second areas. A width of the third area in a width direction perpendicular to an arrangement direction of the first and second areas is smaller than a width of each of the first and second areas in the width direction.
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| | ===POWER CONVERSION APPARATUS AND POWER CONVERSION SYSTEM ([[US Patent Application 18308926. POWER CONVERSION APPARATUS AND POWER CONVERSION SYSTEM simplified abstract|18308926]])=== | | ===POWER CONVERSION APPARATUS AND POWER CONVERSION SYSTEM ([[US Patent Application 18308926. POWER CONVERSION APPARATUS AND POWER CONVERSION SYSTEM simplified abstract|18308926]])=== |
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| | Eiji TAKEGAMI | | Eiji TAKEGAMI |
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| − | '''Brief explanation'''
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| − | The patent application describes a power conversion apparatus that converts electric power from an input terminal to an output terminal.
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| − | * The power conversion circuit in the apparatus includes a sensor that generates a detection signal based on the output voltage or current.
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| − | * A signal generation circuit generates a second detection signal based on the first detection signal.
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| − | * The control circuit is responsible for controlling the operation of the power conversion circuit.
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| − | * The signal generation circuit consists of a corrector, a photocoupler, and an output circuit.
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| − | * The corrector performs correction processing on the first detection signal.
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| − | * The photocoupler has a light receiving device that generates a light reception signal.
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| − | * The output circuit outputs the second detection signal based on the light reception signal.
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| − | * The corrector adjusts the correction processing based on the current transfer ratio of the photocoupler.
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| − |
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| − | '''Abstract'''
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| − | A power conversion apparatus includes an input power terminal, an output power terminal, a power conversion circuit, a signal generation circuit, and a control circuit. The power conversion circuit converts supplied electric power and outputs the converted electric power. The power conversion circuit includes a sensor that generates a first detection signal corresponding to an output voltage or an output current. The signal generation circuit generates a second detection signal corresponding to the first detection signal. The control circuit controls operation of the power conversion circuit. The signal generation circuit includes a corrector, a photocoupler, and an output circuit. The corrector performs correction processing on the first detection signal. The photocoupler includes a light receiving device generating a light reception signal. The output circuit outputs the second detection signal corresponding to the light reception signal. The corrector performs the correction processing corresponding to a current transfer ratio of the photocoupler.
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| | ===ACOUSTIC DEVICE ([[US Patent Application 18322116. ACOUSTIC DEVICE simplified abstract|18322116]])=== | | ===ACOUSTIC DEVICE ([[US Patent Application 18322116. ACOUSTIC DEVICE simplified abstract|18322116]])=== |
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| | Takashi KATO | | Takashi KATO |
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| − | '''Brief explanation'''
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| − | The patent application describes an acoustic device that includes two vibrating bodies and a base material.
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| − | * The first vibrating body has a specific vibration frequency.
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| − | * The second vibrating body has a different vibration frequency.
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| − | * The second vibrating body is placed on a disposition surface of the base material.
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| − | * In a plan view of the base material, the first and second vibrating bodies are arranged in the same direction on the disposition surface.
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| − |
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| − | '''Abstract'''
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| − | An acoustic device includes: a first vibrating body having a first vibration frequency; a second vibrating body having a second vibration frequency; and a base material having a disposition surface on which the second vibrating body is disposed. In a plan view of the base material, the first vibrating body and the second vibrating body are arranged in an in-plane direction of the disposition surface.
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| | ===MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT ([[US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract|18232941]])=== | | ===MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT ([[US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract|18232941]])=== |
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| | Yugo ISHITANI | | Yugo ISHITANI |
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| − | '''Brief explanation'''
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| − | The abstract describes a magnetization rotational element with a spin-orbit torque wiring and a ferromagnetic layer.
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| − | * The magnetization rotational element includes a spin-orbit torque wiring and a first ferromagnetic layer.
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| − | * The spin-orbit torque wiring is located in a first direction with respect to the spin-orbit torque wiring.
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| − | * Spins are injected from the spin-orbit torque wiring into the first ferromagnetic layer.
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| − | * The spin-orbit torque wiring has multiple spin generation layers and insertion layers.
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| − | * The insertion layers have a lower electrical resistivity than the spin generation layers.
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| − |
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| − | '''Abstract'''
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| − | A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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| | ===MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT ([[US Patent Application 17971775. MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT simplified abstract|17971775]])=== | | ===MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT ([[US Patent Application 17971775. MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT simplified abstract|17971775]])=== |
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| | Tomoyuki SASAKI | | Tomoyuki SASAKI |
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| − |
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| − | '''Brief explanation'''
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| − | The patent application describes a magneto-resistive element with specific layers and regions.
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| − | * The magneto-resistive element consists of a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer.
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| − | * The non-magnetic layer is positioned between the first and second ferromagnetic layers.
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| − | * The non-magnetic layer has a first central region and a first outer circumferential region.
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| − | * The first outer circumferential region, located on the outer side of the first central region, has a maximum thickness.
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| − | * The average thickness of the first central region is smaller than the maximum thickness of the first outer circumferential region.
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| − |
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| − | '''Abstract'''
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| − | A magneto-resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a first central region, and a first outer circumferential region disposed on an outer side of the first central region. A maximum thickness of the first outer circumferential region is greater than an average thickness of the first central region.
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