US Patent Application 18315563. DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT simplified abstract

DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT

Organization Name

TDK CORPORATION

Inventor(s)

Yuichiro Sueda of Tokyo (JP)

Kengo Aizawa of Tokyo (JP)

Shota Kumagai of Tokyo (JP)

Takeshi Shouji of Tokyo (JP)

Satoshi Sugawara of Tokyo (JP)

Masatoshi Tarutani of Tokyo (JP)

Atsushi Yamada of Yurihonjo-city (JP)

Manabu Kumagai of Yurihonjo-city (JP)

DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18315563 titled 'DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT

Simplified Explanation

- The patent application describes a dielectric composition that includes dielectric grains, a grain boundary phase, and segregation grains. - The dielectric grains contain a main component represented by a composition formula [(CaSr)O][(TiHfZr)O]. - The segregation grains contain at least Ca, Si, and O. - There are two types of segregation grains: first segregation grains that contain Mn and second segregation grains that do not contain Mn. - The number density of first segregation grains (N1) in the dielectric composition is more than 0.23 and 1.00 or less, relative to the number density of second segregation grains (N2). - The patent application aims to provide a dielectric composition with specific segregation grain characteristics for improved performance in certain applications.

Original Abstract Submitted

A dielectric composition, including: dielectric grains containing a main component represented by a composition formula [(CaSr)O][(TiHfZr)O] (m is more than 1.020); a grain boundary phase located between the dielectric grains; and segregation grains each containing at least Ca, Si, and O. A first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O, and a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O. N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.