ROHM CO., LTD. patent applications published on November 30th, 2023

Summary of the patent applications from ROHM CO., LTD. on November 30th, 2023

ROHM CO., LTD. has recently filed several patents related to semiconductor devices and circuits. These patents cover a wide range of technologies, including transmission circuits, gate voltage correction circuits, switching power supply circuits, power factor correction circuits, terahertz devices, nitride semiconductor devices, and insulated die pads.

In the transmission circuit patent, multiple terminals and variable resistance circuits are described. A controller is used to control the resistance values of the variable resistance circuits based on transmission data.

The semiconductor device patent focuses on a device with two insulated-gate transistors, a charger-discharger, and a gate voltage correction circuit. The device allows for increased power handling capability and ensures equalized gate voltages during various operations.

The switching power supply circuit patent describes a circuit that generates an output voltage using an output stage circuit consisting of an output transistor and a synchronous rectification transistor. The circuit includes various components such as an error amplifier, a slope voltage generation circuit, a comparator, a clock signal generation circuit, and a control drive circuit.

The power factor correction circuit patent presents a control circuit for a power factor correction circuit that includes a DC-DC converter. The control circuit adjusts the gain of the amplifier and the gradient of the slope voltage based on the load power of the DC-DC converter.

The terahertz device patent describes a device that can generate and transmit electromagnetic waves in the terahertz band. The device includes a terahertz element and a waveguide, with the terahertz element positioned in the transmission region of the waveguide.

The nitride semiconductor device patent focuses on a device with specific layers and electrodes, including an electron transit layer, an electron supply layer, a gate layer, a gate electrode, an insulation layer, a source electrode, and a drain electrode.

The insulated die pad patent describes a semiconductor device with separate die pads for high-voltage and low-voltage components. A resistive element is mounted on the high-voltage die pad, and a semiconductor element is mounted on the low-voltage die pad.

The semiconductor device patent presents a device with a semiconductor chip that includes a first conductive layer, a second conductive layer, an insulating layer, and a first pad.

The final patent describes a semiconductor device with multiple semiconductor elements supported by a conductive support. A third semiconductor element is used to insulate the other elements, and the distance between the leads on the conductive support is determined based on insulation life, material constants, and voltage.

Notable applications:

• Transmission circuit with variable resistance circuits controlled by a controller.
• Semiconductor device with two insulated-gate transistors and a gate voltage correction circuit.
• Switching power supply circuit with an output stage circuit and various control components.
• Power factor correction circuit with a control circuit for a DC-DC converter.
• Terahertz device for generating and transmitting electromagnetic waves.
• Nitride semiconductor device with specific layers and electrodes.
• Insulated die pad for separate mounting of high-voltage and low-voltage components.
• Semiconductor device with a semiconductor chip and a first pad.
• Semiconductor device with multiple semiconductor elements and a conductive support.

Patent applications for ROHM CO., LTD. on November 30th, 2023

TACTILE SENSE PRESENTATION DEVICE, TACTILE SENSE PRESENTATION METHOD, RECORDING MEDIUM, AND ELECTRONIC DEVICE (18322050)

Main Inventor

Takashi NAIKI

Brief explanation

The patent application describes a device that can provide tactile feedback based on the state of an object.

• The device can acquire information about the position, direction, distance, speed, acceleration, and urgency of an object.
• It can then present this information as a tactile stimulus in a pseudo manner.
• The tactile feedback is designed to simulate the state of the object and provide a tactile experience for the user.

Abstract

A tactile sense presentation device includes: an object information acquisition part configured to acquire, as a state of an object, object information related to at least one selected from the group of a position, a direction, a distance, a speed, an acceleration, and urgency; and a tactile stimulus presentation part configured to present the state of the object as a tactile stimulus in a pseudo manner based on the object information.

MEMS SENSOR AND MEMS SENSOR MANUFACTURING METHOD (18448600)

Main Inventor

Martin Wilfried HELLER

Brief explanation

The abstract describes a MEMS sensor that includes a semiconductor chip with a cavity, a frame portion, and a movable portion.

• The semiconductor chip has a first and second principal surface.
• The frame portion forms the bottom and side of the cavity.
• The movable portion is on the first principal surface and is supported by the frame portion in a floating state.
• The frame portion has a stepped surface between the bottom of the cavity and the first principal surface.
• The movable portion includes a main body portion facing the cavity and an extension portion that extends towards the upper region of the stepped surface.
• The extension portion faces the stepped surface.

Abstract

A MEMS sensor includes a semiconductor chip that has a first principal surface and a second principal surface and that has a cavity, a frame portion that forms a bottom portion and a side portion of the cavity, and a movable portion that is formed on the side of the first principal surface and that is supported by the frame portion in a floating state with respect to the cavity, and, in the MEMS sensor, the frame portion has a stepped surface formed at a height position between the bottom portion of the cavity and the first principal surface, and the movable portion includes a main body portion facing the cavity in a first direction and an extension portion that extends from the main body portion toward an upper region of the stepped surface in a second direction and that faces the stepped surface in the first direction.

AUTONOMOUS MOVEMENT DEVICE AND AUTONOMOUS MOVEMENT SYSTEM (18447961)

Main Inventor

Hiroshi YAGUMA

Brief explanation

The patent application describes an autonomous movement device that can receive and process output information to determine its movement direction. 

• The device includes an antenna unit to receive output information.
• An angle estimation unit estimates the arrival direction of the output information.
• A reception strength determination unit determines the reception strength of the output information in the estimated arrival direction.
• An operation control unit generates movement direction information based on the estimated arrival direction and the reception strength.
• The movement direction information includes the direction for the device to move.
• The operation control unit also considers the magnitude or change in reception strength when generating the movement direction information.
• A drive unit generates drive information corresponding to the movement direction information, enabling the device to move accordingly.

Abstract

The autonomous movement device includes: an reception unit that is an antenna unit configured to receive output information; an angle estimation unit configured to estimate an arrival direction of the output information; a reception strength determination unit configured to determine a reception strength of the output information in the estimated arrival direction; an operation control unit configured generate movement direction information including a movement direction for moving an autonomous movement device, according to the estimated arrival direction and a magnitude of or a change in the reception strength; and a drive unit configured to generate drive information corresponding to the movement direction information.

SEMICONDUCTOR DEVICE (18196436)

Main Inventor

Kengo OHMORI

Brief explanation

The patent application describes a semiconductor device with a switching element and various components.

• The device includes a switching element with three electrodes formed on its surface.
• There are leads that connect the electrodes to external components.
• Bonding layers are used to bond the leads and electrodes together.
• A sealing resin covers the device and has a surface facing the same direction as the element surface.
• The leads have exposed terminal portions at the resin surface.

Abstract

A semiconductor device includes a switching element including an element obverse surface, leads, bonding layers, and a sealing resin. The switching element includes a first electrode, a second electrode, and a third electrode each formed at the element obverse surface. The leads include a first lead, a second lead, and a third lead. The bonding layers include a first bonding layer bonding the first lead and the first electrode, a second bonding layer bonding the second lead and the second electrode, and a third bonding layer bonding the third lead and the third electrode. The sealing resin includes a resin first surface facing in the same direction as the element obverse surface. The first lead, the second lead and the third lead include a first terminal portion, a second terminal portion and a third terminal portion, respectively, which are exposed at the resin first surface.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD (18449360)

Main Inventor

Yoshizo OSUMI

Brief explanation

The patent application describes a semiconductor device that includes multiple semiconductor elements, a conductive support, a third semiconductor element, and a sealing resin. The conductive support has two leads spaced apart in a certain direction. The first semiconductor element is supported by the first lead, the second semiconductor element is supported by the second lead, and the third semiconductor element insulates the first and second elements. The sealing resin covers part of the conductive support. The distance between the leads is greater than a calculated value based on the expected insulation life, material constants, and voltage.

• The patent application is for a semiconductor device with improved insulation properties.
• The device includes multiple semiconductor elements supported by a conductive support.
• A third semiconductor element is used to insulate the other elements.
• The conductive support has two leads spaced apart in a specific direction.
• The sealing resin covers part of the conductive support.
• The distance between the leads is determined based on the expected insulation life, material constants, and voltage.

Abstract

A semiconductor device includes first and second semiconductor elements, a conductive support, a third semiconductor element and a sealing resin. The conductive support includes first and second leads spaced apart in a first direction. The first semiconductor element is supported by the first lead. The second semiconductor element is supported by the second lead. The third semiconductor element, supported by the conductive support, insulates the first semiconductor element and the second semiconductor element. The sealing resin covers a part of the conductive support. A distance d1 between the first lead and the second lead in the first direction is greater than distance d0 given by Equation below. In Equation below, Y is the number of years of insulation life (years) expected for the semiconductor device, A and B are constants determined by a material of the sealing resin, and X is a voltage (kVrms).

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE (18029105)

Main Inventor

Bungo TANAKA

Brief explanation

The patent application describes a semiconductor device that includes a semiconductor chip with a principal surface.

• The semiconductor chip has a first conductive layer connected to a first potential and a second conductive layer connected to a second potential higher than the first potential.
• An insulating layer is formed between the first and second conductive layers.
• A first pad is formed in a region separated from the second conductive layer in a plan view and is electrically connected to the first conductive layer.

Abstract

A semiconductor device includes a semiconductor chip that has a principal surface, a first conductive layer that is formed on the principal surface of the semiconductor chip and connected to a first potential, a second conductive layer that opposes the first conductive layer of the principal surface in a normal direction and is connected to a second potential higher than the first potential, an insulating layer that is formed between the first conductive layer and the second conductive layer, and a first pad that is formed in a region separated from a region that opposes the second conductive layer in a first direction in a plan view when the semiconductor chip is viewed in the normal direction and that is electrically connected to the first conductive layer.

SEMICONDUCTOR DEVICE (18447832)

Main Inventor

Masahiko ARIMURA

Brief explanation

The patent application describes a semiconductor device with two insulated die pads: a high-voltage die pad and a low-voltage die pad.

A resistive element is mounted on the high-voltage die pad, and a semiconductor element is mounted on the low-voltage die pad. The resistive element consists of a substrate mounted on the high-voltage die pad, an insulating layer formed on the substrate, and a thin film resistive layer formed on the insulating layer.

• The semiconductor device has separate die pads for high-voltage and low-voltage components.
• A resistive element is mounted on the high-voltage die pad.
• The resistive element includes a substrate, an insulating layer, and a thin film resistive layer.
• A semiconductor element is mounted on the low-voltage die pad.

Abstract

This semiconductor device is provided with: a high-voltage die pad and a low-voltage die pad, which are insulated from each other; a resistive element which is mounted on the high-voltage die pad; and a semiconductor element which is mounted on the low-voltage die pad. The resistive element is provided with: a substrate which is mounted on the high-voltage die pad; an insulating layer which is formed on the substrate; and a thin film resistive layer which is formed on the insulating layer.

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE (18364479)

Main Inventor

Kentaro CHIKAMATSU

Brief explanation

The patent application describes a nitride semiconductor device with specific layers and electrodes.

• The device includes an electron transit layer, an electron supply layer, a gate layer, a gate electrode, an insulation layer, a source electrode, and a drain electrode.
• The insulation layer covers the electron supply layer, gate layer, and gate electrode, and has two openings.
• The source electrode includes a source field plate that covers the insulation layer and is positioned between the second opening and the gate layer.
• The insulation layer is composed of two parts with different thicknesses.
• The first insulation layer part is in contact with the drain electrode and has a smaller thickness.
• The second insulation layer part is in contact with the source field plate and has a larger thickness.

Abstract

A nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer, a gate electrode, an insulation layer covering the electron supply layer, the gate layer, and the gate electrode and including a first opening and a second opening, a source electrode, and a drain electrode. The source electrode includes a source field plate covering the insulation layer and including an end located between the second opening and the gate layer in plan view. The insulation layer includes a first insulation layer part and a second insulation layer part. The first insulation layer part is disposed on the electron supply layer in contact with the drain electrode and has a first thickness. The second insulation layer part is disposed on the gate electrode in contact with the source field plate and has a second thickness. The second thickness is greater than the first thickness.

TERAHERTZ DEVICE (17766927)

Main Inventor

Jaeyoung KIM

Brief explanation

The patent application describes a terahertz device that can generate and transmit electromagnetic waves in the terahertz band.

• Terahertz device comprises a terahertz element and a waveguide.
• The terahertz element can oscillate and radiate electromagnetic waves in the terahertz band.
• The waveguide has a transmission region for transmitting the electromagnetic waves.
• The terahertz element has a principal surface and a rear surface facing each other.
• It has an oscillation point on the principal surface for generating the electromagnetic waves.
• It also has a radiation point for emitting the electromagnetic waves.
• The terahertz element is positioned in the transmission region so that the oscillation and radiation points are within it.

Abstract

A terahertz device (A) comprises a terahertz element () that allows oscillation and radiation of electromagnetic waves in the terahertz band and a waveguide () having a transmission region () for transmitting electromagnetic waves. The terahertz element () has an element principal surface () and an element rear surface () which face oppositely, an oscillation point (P) for the oscillation of electromagnetic waves on the element principal surface (), and a radiation point (P) for the radiation of electromagnetic waves. The terahertz element () is disposed such that the oscillation point (P) and the radiation point (P) are placed in the transmission region ().

CONTROL CIRCUIT, POWER FACTOR CORRECTION CIRCUIT, AND ELECTRIC APPLIANCE (18315992)

Main Inventor

Manae ITO

Brief explanation

The patent application describes a control circuit for a power factor correction circuit that includes a DC-DC converter. 

• The control circuit includes an amplifier, a comparator, and a driver.
• The amplifier amplifies a voltage that represents the output voltage of the DC-DC converter.
• The comparator compares the output voltage of the amplifier with a slope voltage that represents the current passing through a switching element in the DC-DC converter.
• The driver drives the switching element based on the output voltage of the comparator.
• The control circuit is designed to adjust the gain of the amplifier and the gradient of the slope voltage based on the load power of the DC-DC converter.

Abstract

A control circuit controls a power factor correction circuit including a DC-DC converter. The control circuit includes an amplifier configured to amplify a voltage commensurate with the output voltage of the DC-DC converter, a comparator configured to compare the output voltage of the amplifier with a slope voltage commensurate with the current passing through a switching element in the DC-DC converter, and a driver configured to drive the switching element based on the output voltage of the comparator. The control circuit is configured to adjust at least one of the gain of the amplifier and the gradient of the slope voltage in accordance with the load power of the DC-DC converter.

SWITCHING POWER SUPPLY CIRCUIT AND SWITCHING POWER SUPPLY DEVICE (18302982)

Main Inventor

Tadashi AKAHO

Brief explanation

The patent application describes a switching power supply circuit that generates an output voltage using an output stage circuit consisting of an output transistor and a synchronous rectification transistor.

• The circuit includes an error amplifier that generates an error voltage based on the difference between a feedback voltage (corresponding to the output voltage) and a predetermined reference voltage.
• A slope voltage generation circuit generates a slope voltage, which is used in the comparison process.
• A comparator compares a first comparison voltage with a second comparison voltage, which is either the slope voltage or a sum of the slope voltage and a voltage corresponding to the inductor current.
• A clock signal generation circuit generates a clock signal that is used in controlling the output stage circuit.
• A control drive circuit controls the output stage circuit based on the clock signal and the comparison result signal from the comparator.
• A reverse current detection circuit is included to detect any reverse current in the inductor current.

Abstract

A switching power supply circuit includes an output stage circuit having an output transistor and a synchronous rectification transistor, and generates an output voltage. The switching power supply circuit includes an error amplifier to generate an error voltage corresponding to a difference between a feedback voltage corresponding to the output voltage and a predetermined reference voltage, a slope voltage generation circuit to generate a slope voltage, a comparator to generate a comparison result signal by comparing a first comparison voltage with a second comparison voltage which is the slope voltage or a sum of the slope voltage and a voltage corresponding to the inductor current, a clock signal generation circuit to generate a clock signal, a control drive circuit to control the output stage circuit based on the clock signal and the comparison result signal, and a reverse current detection circuit to detect a reverse current of the inductor current.

SEMICONDUCTOR DEVICE (18448285)

Main Inventor

Naoki TAKAHASHI

Brief explanation

The patent application describes a semiconductor device with two insulated-gate transistors, a charger-discharger, and a gate voltage correction circuit.

• The device has two transistors connected in parallel, allowing for increased power handling capability.
• A charger-discharger is included to control the charging and discharging of the gates of the transistors.
• The charger-discharger can perform three types of control: charging both gates, discharging both gates, or charging only one gate.
• A gate voltage correction circuit is implemented to ensure that the gate voltages of the transistors are equalized.
• This correction circuit eliminates any voltage differences between the gates during charging, discharging, or protection operations.
• The protection operation refers to a scenario where the transistors are intentionally kept off to prevent damage or malfunction.
• The gate voltage correction circuit ensures that the transistors are properly controlled and protected.

Abstract

A semiconductor device includes first and second insulated-gate transistors in parallel with each other, a charger-discharger, and a gate voltage correction circuit. The charger-discharger can perform first control to charge both of the gates of the first and second transistors, second control to discharge both of the gates of the first and second transistors, and third control to charge one of the gates of the first and second transistors. The gate voltage correction circuit corrects the gate voltages of the first and second transistors to eliminate the difference between those voltages in at least one of the first control, the second control, and protection operation in which the first and second transistors are forcibly kept off.

TRANSMISSION CIRCUIT, ELECTRONIC CONTROL UNIT, AND VEHICLE (18449780)

Main Inventor

Toru MUKAI

Brief explanation

The patent application describes a transmission circuit that includes multiple terminals and variable resistance circuits.

• The transmission circuit has a first terminal with a higher voltage and a second terminal with a lower voltage.
• There are also a third and fourth terminal to which the second voltage is applied.
• The circuit includes a first variable resistance circuit between the first and second terminals and a second variable resistance circuit between the third and fourth terminals.
• A controller is used to control the resistance values of the variable resistance circuits based on transmission data.
• The variable resistance circuits are made up of multiple series circuits of a resistor and a switch, arranged in parallel.
• Each variable resistance circuit includes a charge adjuster that absorbs and discharges electric charge from the switches.

Abstract

A transmission circuit includes a first terminal to which a first voltage is applied, a second terminal, a third terminal, and a fourth terminal to which a second voltage lower than the first voltage is applied. The transmission circuit further includes a first variable resistance circuit between the first and second terminals, a second variable resistance circuit between the third and fourth terminals, and a controller that controls the resistance values of the first and second variable resistance circuits based on transmission data. The first and second variable resistance circuits are each a parallel circuit of a plurality of series circuits of a resistor and a switch. The first and second variable resistance circuits each include a charge adjuster that absorbs and discharges electric charge with respect to at least some of a plurality of switches.