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Category:Anand Murthy of Portland OR (US)
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Pages in category "Anand Murthy of Portland OR (US)"
The following 16 pages are in this category, out of 16 total.
1
- 17523711. CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS simplified abstract (Intel Corporation)
- 17847559. GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
I
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240105582). LOW TEMPERATURE CAPACITIVELY COUPLED DEVICE FOR LOW NOISE CIRCUITS simplified abstract
- Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract
- Intel corporation (20240105585). SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS simplified abstract
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract
- Intel corporation (20240105677). RECONSTITUTED WAFER WITH SIDE-STACKED INTEGRATED CIRCUIT DIE simplified abstract
- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract