SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract: a semiconductor structure and a manufacturing method thereof are provided. a semiconductor structure includes top, bottom, and middle tiers. the bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. the middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure. a bonding feature of the second front-side bonding structure includes a first bonding via in contact with the second interconnect structure, a first bonding contact overlying the first bonding via, and a barrier layer interface between a bottom of the first bonding contact and a top of the first bonding via.

Inventor(s): Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Hsing-Chih Lin, Zheng-Xun Li

CPC Classification: H01L24/80 ({Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected})

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