Category:Marko Radosavljevic of Portland OR (US)
Marko Radosavljevic
Marko Radosavljevic from Portland OR (US) has applied for patents in technology areas such as H01L29/06, H01L21/8238, H01L27/092 with intel corporation.
Patents
Subcategories
This category has only the following subcategory.
M
Pages in category "Marko Radosavljevic of Portland OR (US)"
The following 48 pages are in this category, out of 48 total.
1
- 17809329. DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS simplified abstract (Intel Corporation)
- 17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17847555. MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)
- 17847628. LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17851658. SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 18064362. MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW simplified abstract (Intel Corporation)
- 18088541. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH simplified abstract (Intel Corporation)
- 18088542. GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract (Intel Corporation)
- 18088545. GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract (Intel Corporation)
- 18089919. TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract (Intel Corporation)
- 18091676. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN NUMBERS simplified abstract (Intel Corporation)
- 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation)
- 18216520. STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATERIALS (Intel Corporation)
- 18244090. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIAL NANOWIRE THICKNESS AND GATE OXIDE THICKNESS (Intel Corporation)
- 18343203. P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES (Intel Corporation)
- 18344022. NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES (Intel Corporation)
- 18345127. TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS (Intel Corporation)
- 18345168. STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS (Intel Corporation)
- 18346212. TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT (Intel Corporation)
- 18346227. PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN (Intel Corporation)
- 18455446. RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT (Intel Corporation)
- 18513028. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CHANNEL STRUCTURES USING SELECTIVE BOTTOM-UP APPROACH simplified abstract (Intel Corporation)
- 18614290. STACKED FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)
I
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240128269). VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS simplified abstract
- Intel corporation (20240194672). MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW simplified abstract
- Intel corporation (20240204059). GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240204060). NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORIBBONS simplified abstract
- Intel corporation (20240204091). LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES simplified abstract
- Intel corporation (20240204103). TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS simplified abstract
- Intel corporation (20240213118). GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract
- Intel corporation (20240213140). INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH simplified abstract
- Intel corporation (20240213331). GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240222376). TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract
- Intel corporation (20240222440). TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract
- Intel corporation (20240222521). TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN NUMBERS simplified abstract
- Intel corporation (20240234422). STACKED FORKSHEET TRANSISTORS simplified abstract
- Intel corporation (20240332389). PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON DEVICES simplified abstract
- Intel corporation (20240429301). PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY EPITAXIAL LATERAL OVERGROWTH
- Intel corporation (20250072069). RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Intel corporation (20250089312). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIAL NANOWIRE THICKNESS AND GATE OXIDE THICKNESS